Page 1
2001. 11. 7 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3544T
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS AND STROBES APPLICATION.
FEATURES
Adoption of MBIT Processes.
Large Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
High Speed Switching.
Ultrasmall Package facilitates miniaturization in end products.
High Allowable Power Dissipation.
Complementary to KTA1544T.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
30 V
Collector-Emitter Voltage
V
CEO
30 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current
DC
I
C
2
A
Pulse
I
CP
4
Base Current
I
B
400 mA
Collector Power Dissipation
PC *
0.9 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Package mounted on a ceramic board (600 0.8 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=20V, IE=0
- - 0.1
A
Emitter Cut-off Current
I
EBO
VEB=3V, IC=0
- - 0.1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=10 A, IE=0
30 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEOIC
=1mA, IB=0
30 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=10 A, IC=0
6 - - V
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=1.5A, IB=75mA
- 180 400 mV
Base-Emitter Saturation Voltage
V
BE(sat)
IC=1.5A, IB=75mA
- 0.85 1.2 V
DC Current Gain
h
FE
VCE=2V, IC=100mA
200 - 560
Transition Frequency
f
T
VCE=10V, IC=50mA
- 150 - MHz
Collector Output Capacitance
C
ob
VCB=10V, f=1MHz
- 19 - pF
Switching
Time
Turn-On Time
t
on
- 60 -
nS
Storage Time
t
stg
- 500 -
Fall Time
t
f
- 25 -
E
B
A
F
C
K
G
G
L
J
1. EMITTER
2. BASE
3. COLLECTOR
2
1
3
I
D
H
J
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 0.60
L 0.55
_
2.9 0.2
+
1.6+0.2/-0.1
_
0.70 0.05
+
_
0.4 0.1
+
2.8+0.2/-0.3
_
1.9 0.2
+
0.95
_
0.16 0.05
+
0.00-0.10
0.25+0.25/-0.15
TSM
Marking
Lot No.
Type Name
H N
INPUT
PW=20µs
DC 1%
50Ω
I
<
=
V
R
V =-5V
BE
20I =-20I =I =500mA
B1
I
B2
R
B
100µF
B1
470µF
V =12V
C
B2
OUTPUT
24Ω
CC
Page 2
2001. 11. 7 2/3
KTC3544T
Revision No : 0
I - V
C
2.0
1.8
1.6
C
50mA
40mA
30mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
COLLECTOR CURRENT I (A)
0
0
0.2 0.4 0.6 0.8 1.0
COLLECTOR-EMITTER VOLTAGE V (V)
V - I
CE(sat) C
1
I /I =10
CB
0.5
0.3
CE
20mA
10mA
8mA
6mA
4mA
2mA
I =0mA
B
CE
h - I
FE
1K
500
FE
300
100
DC CURRENT GAIN h
50
30
0.01 0.03 0.1 1
COLLECTOR CURRENT I (A)
I - V
C
2.0
V =2V
CE
C
1.6
BE
C
V =2V
CE
20.3
C
CE(sat)
0.1
0.05
0.03
VOLTAGE V (V)
0.01
COLLECTOR-EMITTER SATURATION
0.005 0.01 0.05 0.10.03 0.3 0.5 1 2
COLLECTOR CURRENT I (A)
f - I
C
T
1K
500
T
300
100
50
30
C
V =10V
CE
1.2
0.8
0.4
COLLECTOR CURRENT I (A)
0
0.2 0.4 0.6 0.8 1.0 1.2
0
BASE-EMITTER VOLTAGE V (V)
C - V
100
70
50
30
ob
C (pF)
BE
ob
CB
f=1MHz
10
TRANSITION FREQUENCY f (MHz)
0.01 0.03 0.1 1
COLLECTOR CURRENT I (A)
C
20.3
10
COLLECTOR OUTPUT CAPACITANCE
135 503010
COLLECTOR-BASE VOLTAGE V (V)
CB
Page 3
2001. 11. 7 3/3
KTC3544T
Revision No : 0
SAFE OPERATING AREA
10
I MAX.(PULSED)
5
C
3
I MAX (CON-
0.5
C
TINUOUS)
1
100mS*
DC OPERATION
C
0.3
SINGLE NONREPETITIVE
*
PULSE Ta=25 C
0.1
CURVES MUST BE DERATED
COLLECTOR CURRENT I (A)
LINEARLY WITH INCREASE
0.05
IN TEMPERATURE
MOUNTED ON A CERAMIC BOARD
2
(600mm `0.8mm)
0.02
0.2 0.5 135103050
COLLECTOR-EMITTER VOLTAGE V (V)
10mS*
500µS*
1mS*
CE
100µS*
Pc - Ta
1.4
1.2
1.0
0.8
C
0.6
P (W)
0.4
0.2
COLLECTOR POWER DISSIPATION
0
20 40 60 80 100 120
0
AMBIENT TEMPERATURE Ta ( C)
MOUNTED ON A
CERAMIC BOARD
2
(600mm `0.8mm)
140 160
Loading...