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2011. 5. 25 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC3544S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS AND STROBES APPLICATION.
FEATURES
·Adoption of MBIT Processes.
·Large Current Capacitance.
·Low Collector-to-Emitter Saturation Voltage.
·High Speed Switching.
·Ultrasmall Package facilitates miniaturization in end products.
·Complementary to KTA1544S.
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
30 V
Collector-Emitter Voltage
V
CEO
30 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current
DC
I
C
2
A
Pulse
I
CP
4
Base Current
I
B
400 mA
Collector Power Dissipation
P
C
200 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=20V, IE=0
- - 0.1
μA
Emitter Cut-off Current
I
EBO
VEB=3V, IC=0
- - 0.1
μA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10μA, I
E
=0
30 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEOIC
=1mA, IB=0
30 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10μA, I
C
=0
6 - - V
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=1.5A, IB=75mA
- 180 400 mV
Base-Emitter Saturation Voltage
V
BE(sat)
IC=1.5A, IB=75mA
- 0.85 1.2 V
DC Current Gain
h
FE
VCE=2V, IC=100mA
200 - 560
Transition Frequency
f
T
VCE=10V, IC=50mA
- 150 - MHz
Collector Output Capacitance
C
ob
VCB=10V, f=1MHz
- 19 - pF
Switching
Time
Turn-On Time
t
on
- 60 -
nS
Storage Time
t
stg
- 500 -
Fall Time
t
f
- 25 -
E
B
LL
DIM MILLIMETERS
A
B
C
D
3
M
D
E
G 1.90
H
J
K
L
M
N
P7
J
Q Max 0.1.
H
N
C
2
1
PP
K
A
G
Q
_
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
SOT-23
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2011. 5. 25 2/2
KTC3544S
Revision No : 0
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