Page 1
2001. 6. 29 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3543T
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS, STROBES APPLICATION.
FEATURES
Adoption of MBIT Processes.
High Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
High-Speed Switching.
Ultrasmall-sized Package Permitting Applied sets to
be made small and slim.
High Allowable Power Dissipation.
Complementary to KTA1543T.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
40 V
Collector-Emitter Voltage
V
CEO
30 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current
DC
I
C
5
A
Pulse
I
CP
7
Base Current
I
B
1.2 A
Collector Power Dissipation
PC *
0.9 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Package mounted on a ceramic board (600 0.8 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=30V, IE=0
- - 0.1
A
Emitter Cut-off Current
I
EBO
VEB=4V, IC=0
- - 0.1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=10 A, IE=0
40 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEOIC
=1mA, IB=0
30 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=10 A, IC=0
6 - - V
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=2.5A, IB=50mA
- 110 165 mV
Base-Emitter Saturation Voltage
V
BE(sat)
IC=2.5A, IB=50mA
- 0.82 1.2 V
DC Current Gain
h
FE
VCE=2V, IC=500mA
200 - 560
Transition Frequency
f
T
VCE=10V, IC=500mA
- 290 - MHz
Collector Output Capacitance
C
ob
VCB=10V, f=1MHz
- 40 - pF
Switching
Time
Turn-On Time
t
on
- 30 -
nS
Storage Time
t
stg
- 320 -
Fall Time
t
f
- 14 -
E
B
A
F
C
K
G
G
L
J
1. EMITTER
2. BASE
3. COLLECTOR
2
1
3
I
D
H
J
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 0.60
L 0.55
_
2.9 0.2
+
1.6+0.2/-0.1
_
0.70 0.05
+
_
0.4 0.1
+
2.8+0.2/-0.3
_
1.9 0.2
+
0.95
_
0.16 0.05
+
0.00-0.10
0.25+0.25/-0.15
TSM
Marking
Lot No.
Type Name
H J
INPUT
PW=20µs
DC 1%
50Ω
I
<
=
B2
R
V
R
100µF
V =-5V
BE
20I =-20I =I =2.5A
B1
I
B1
B
470µF
V =12V
C
B2
OUTPUT
R
L
CC
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2001. 6. 29 2/3
KTC3543T
Revision No : 0
I - V
C
5
50mA
4
C
3
70mA
80mA
90mA
60mA
100mA
2
1
COLLECTOR CURRENT I (A)
0
0
100 200 300 400 500
COLLECTOR-EMITTER VOLTAGE V (mV)
V - I
CE(sat) C
1K
500
300
100
50
30
CE(sat)
10
Ta=75 C
Ta=25 C
5
3
VOLTAGE V (mV)
1
COLLECTOR-EMITTER SATURATION
0.01 0.03
0.1 0.3 1 3 10
COLLECTOR CURRENT I (A)
CE
40mA
Ta=-25 C
C
30mA
20mA
10mA
I =0mA
B
CE
I /I =20
CB
h - I
FE C
1K
FE
500
300
Ta=75 C
Ta=25 C
Ta=-25 C
100
50
30
DC CURRENT GAIN h
10
0.01 0.03
0.1 0.3 1 3 10
COLLECTOR CURRENT I (A)
V - I
CE(sat) C
1K
500
300
CE(sat)
100
50
Ta=75 C
30
VOLTAGE V (mV)
10
COLLECTOR-EMITTER SATURATION
0.01 0.03
Ta=25 C
0.1 0.3 1 3 10
COLLECTOR CURRENT I (A)
C
Ta=-25 C
C
V =2V
CE
I /I =50
CB
V - I
10K
5K
3K
BE(sat) C
I /I =50
CB
1.0
V =2V
CE
0.9
0.8
C
0.7
I - V
C
BE
0.6
BE(sat)
1K
500
Ta=-25 C
Ta=25 C
Ta=75 C
300
VOLTAGE V (mV)
BASE-EMITTER SATURATION
100
0.01 0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT I (A)
C
0.5
0.4
0.3
0.2
0.1
COLLECTOR CURRENT I (A)
0
0
0.2 0.4 0.6 0.8 0.90.1 0.3 0.5 0.7
BASE-EMITTER VOLTAGE V (V)
Ta=75 C
Ta=25 C
BE
Ta=-25 C
Page 3
2001. 6. 29 3/3
KTC3543T
Revision No : 0
f - I
TC
C - V
ob
CB
1K
V =10V
CE
500
T
300
100
50
30
10
TRANSITION FREQUENCY f (MHz)
0.01 0.03 0.1 1 30.3
COLLECTOR CURRENT I (A)
SAFE OPERATING AREA
10
I MAX.(PULSED)
C
5
3
I MAX
C
C
COLLECTOR CURRENT I (A)
(CONTIN-
UOUS)
1
0.5
0.3
0.1
0.05
0.03
0.01
SINGLE NONREPETITIVE
*
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
MOUNTED ON A CERAMIC BOARD
2
(600mm `0.8mm)
0.1
0.3 1 3 10 300.5 5 50
COLLECTOR-EMITTER VOLTAGE V (V)
D
C OPERATION
10mS*
100mS*
C
500µS*
1mS*
100µS
CE
1K
f=1MHz
500
300
100
ob
C (pF)
50
30
10
COLLECTOR OUTPUT CAPACITANCE
135 3010
COLLECTOR-BASE VOLTAGE V (V)
CB
Pc - Ta
*
1.2
1.0
0.8
0.6
C
P (W)
0.4
0.2
COLLECTOR POWER DISSIPATION
0
20 40 60 80 100 120
0
AMBIENT TEMPERATURE Ta ( C)
MOUNTED ON A
CERAMIC BOARD
2
(600mm `0.8mm)
140 160
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