Page 1
2001. 6. 29 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3542T
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS, STROBES APPLICATION.
FEATURES
Adoption of MBIT Processes.
Large Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
High-Speed Switching.
Ultrasmall Package Facilitates Miniaturization in end Products.
High Allowable Power Dissipation.
Complementary to KTA1542T.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
40 V
Collector-Emitter Voltage
V
CEO
30 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
DC
I
C
3
A
Pulse
I
CP
5
Base Current
I
B
600 mA
Collector Power Dissipation
PC *
0.9 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Package mounted on a ceramic board (600 0.8 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=30V, IE=0
- - 0.1
A
Emitter Cut-off Current
I
EBO
VEB=4V, IC=0
- - 0.1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=10 A, IE=0
40 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEOIC
=1mA, IB=0
30 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=10 A, IC=0
5 - - V
Collector-Emitter Saturation Voltage
V
CE(sat)1
IC=1.5A, IB=30mA
- 120 180 mV
V
CE(sat)2
IC=1.5A, IB=75mA
- 105 155 mV
Base-Emitter Saturation Voltage
V
BE(sat)
IC=1.5A, IB=30mA
- 0.83 1.2 V
DC Current Gain
h
FE
VCE=2V, IC=500mA
200 - 560
Transition Frequency
f
T
VCE=10V, IC=500mA
- 450 - MHz
Collector Output Capacitance
C
ob
VCB=10V, f=1MHz
- 20 - pF
Switching
Time
Turn-On Time
t
on
- 30 -
nS
Storage Time
t
stg
- 300 -
Fall Time
t
f
- 15 -
E
B
K
2
G
F
A
G
1
C
L
J
1. EMITTER
2. BASE
3. COLLECTOR
3
I
TSM
D
H
J
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 0.60
L 0.55
_
2.9 0.2
+
1.6+0.2/-0.1
_
0.70 0.05
+
_
0.4 0.1
+
2.8+0.2/-0.3
_
1.9 0.2
+
0.95
_
0.16 0.05
+
0.00-0.10
0.25+0.25/-0.15
Marking
Lot No.
Type Name
H H
INPUT
PW=20µs
DC 1%
50Ω
I
<
=
B2
R
V
R
100µF
V =-5V
BE
20I =-20I =I =500mA
B1
I
B1
B
470µF
V =12V
C
B2
OUTPUT
24Ω
CC
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2001. 6. 29 2/3
KTC3542T
Revision No : 0
I - V
2.0
1.6
C
50mA
1.2
0.8
0.4
COLLECTOR CURRENT I (A)
0
0
COLLECTOR-EMITTER VOLTAGE V (mV)
1
0.5
0.3
10mA
20mA
30mA
40mA
200 400 600 800 1K
V - I
CE(sat) C
C
8.0mA
CE
6.0mA
4.0mA
2.0mA
I =0mA
CE
h - I
FE C
1K
FE
500
300
Ta=75 C
Ta=25 C
Ta=-25 C
100
50
30
DC CURRENT GAIN h
V =2V
B
10
0.01 0.03
0.1 0.3 1 3 10
COLLECTOR CURRENT I (A)
V - I
CE(sat) C
10
I /I =50
CB
5
CE
C
3
0.1
0.05
0.03
CE(sat)
0.01
Ta=75 C
a=25 C
T
Ta=-25 C
0.005
0.003
VOLTAGE V (V)
0.001
COLLECTOR-EMITTER SATURATION
0.01 0.03
0.1 0.3 1 3 10
COLLECTOR CURRENT I (A)
V - I
BE(sat) C
10
5
3
BE(sat)
0.5
1
Ta=-25 C
Ta=25 C
Ta=75
0.3
VOLTAGE V (mV)
BASE-EMITTER SATURATION
0.1
0.01 0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT I (A)
C
C
C
I /I =50
I /I =20
CB
CB
1
0.5
CE(sat)
0.3
0.1
0.05
VOLTAGE V (V)
0.03
COLLECTOR-EMITTER SATURATION
0.01
0.01 0.03
Ta=75 C
Ta=25 C
0.1 0.3 1 3 10
COLLECTOR CURRENT I (A)
I - V
BE
C
4.0
V =2V
3.5
C
3.0
CE
2.5
2.0
1.5
1.0
0.5
COLLECTOR CURRENT I (A)
0
0.2 0.4 0.6 0.8 1.0 1.2
0
BASE-EMITTER VOLTAGE V (V)
Ta=75 C
Ta=-25 C
C
Ta=25 C
Ta=-25 C
BE
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2001. 6. 29 3/3
KTC3542T
Revision No : 0
C - V
ob
f - I
TC
1K
V = 10V
CE
500
T
300
100
70
50
CB
f=1MHz
100
50
30
10
TRANSITION FREQUENCY f (MHz)
10 30 100 1K 3K300
COLLECTOR CURRENT I (mA)
SAFE OPERATING AREA
10
I MAX.(PULSED)
C
5
3
I MAX
C
C
COLLECTOR CURRENT I (A)
(CONTIN UOUS)
1
DC OPERATION
0.5
0.3
0.1
0.05
0.03
0.01
SINGLE NONREPETITIVE
*
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
MOUNTED ON A CERAMIC BOARD
2
(600mm `0.8mm)
0.1
0.3 1 3 10 300.5 5 50
COLLECTOR-EMITTER VOLTAGE V (V)
100
C
1mS*
10mS*
mS*
500µ
CE
30
ob
C (pF)
10
COLLECTOR OUTPUT CAPACITANCE
135 3010
COLLECTOR-BASE VOLTAGE V (V)
CB
Pc - Ta
100µ
S*
S
*
1.2
1.0
0.8
0.6
C
P (W)
0.4
0.2
COLLECTOR POWER DISSIPATION
0
20 40 60 80 100 120
0
AMBIENT TEMPERATURE Ta ( C)
MOUNTED ON A
CERAMIC BOARD
2
(600mm `0.8mm)
140 160
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