Page 1
2001. 6. 30 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3541T
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS AND STROBES APPLICATION.
FEATURES
Adoption of MBIT Processes.
Large Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
High Speed Switching.
Ultrasmall Package facilitates miniaturization in end products.
High Allowable Power Dissipation.
Complementary to KTA1541T.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
40 V
Collector-Emitter Voltage
V
CEO
30 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
DC
I
C
1.5
A
Pulse
I
CP
3
Base Current
I
B
300 mA
Collector Power Dissipation
PC *
0.9 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Package mounted on a ceramic board (600 0.8 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=30V, IE=0
- - 0.1
A
Emitter Cut-off Current
I
EBO
VEB=4V, IC=0
- - 0.1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=10 A, IE=0
40 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEOIC
=1mA, IB=0
30 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=10 A, IC=0
5 - - V
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=750mA, IB=15mA
- 150 225 mV
Base-Emitter Saturation Voltage
V
BE(sat)
IC=750mA, IB=15mA
- 0.85 1.2 V
DC Current Gain
h
FE
VCE=2V, IC=100mA
200 - 560
Transition Frequency
f
T
VCE=10V, IC=300mA
- 450 - MHz
Collector Output Capacitance
C
ob
VCB=10V, f=1MHz
- 20 - pF
Switching
Time
Turn-On Time
t
on
- 35 -
nS
Storage Time
t
stg
- 205 -
Fall Time
t
f
- 30 -
E
B
A
F
C
K
G
G
L
J
1. EMITTER
2. BASE
3. COLLECTOR
2
1
3
I
D
H
J
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 0.60
L 0.55
_
2.9 0.2
+
1.6+0.2/-0.1
_
0.70 0.05
+
_
0.4 0.1
+
2.8+0.2/-0.3
_
1.9 0.2
+
0.95
_
0.16 0.05
+
0.00-0.10
0.25+0.25/-0.15
TSM
Marking
Lot No.
Type Name
H F
INPUT
PW=20µs
DC 1%
50Ω
I
<
=
B2
R
V
R
100µF
V =-5V
BE
20I =-20I =I =500mA
B1
I
B1
B
470µF
V =12V
C
B2
OUTPUT
24Ω
CC
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2001. 6. 30 2/3
KTC3541T
Revision No : 0
I - V
C
2.0
1.8
1.6
C
50mA
40mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
COLLECTOR CURRENT I (A)
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
COLLECTOR-EMITTER VOLTAGE V (mV)
V - I
CE(sat) C
1
0.5
0.3
CE
30mA
20mA
10mA
I =0mA
B
CE
I /I =20
CB
8mA
6mA
4mA
2mA
2K
1K
FE
500
300
100
50
30
DC CURRENT GAIN h
V =2V
CE
10
0.01 0.03 0.1 1 30.3
COLLECTOR CURRENT I (A)
1
0.5
0.3
h - I
C
FE
Ta=75 C
Ta=25 C
Ta=-25 C
V - I
CE(sat) C
C
I /I =50
CB
CE(sat)
0.1
0.05
0.03
VOLTAGE V (V)
0.01
COLLECTOR-EMITTER SATURATION
0.01 0.03 0.1 1 30.3
Ta=75 C
a=25 C
T
COLLECTOR CURRENT I (A)
V - I
BE(sat) C
10
5
3
BE(sat)
1
0.5
0.3
VOLTAGE V (V)
a=-25 C
T
Ta=25 C
BASE-EMITTER SATURATION
0.1
0.01 0.03 0.1 1 30.3
COLLECTOR CURRENT I (A)
Ta=-25 C
C
Ta=75 C
C
I /I =50
CB
CE(sat)
0.1
0.05
0.03
VOLTAGE V (V)
0.01
COLLECTOR-EMITTER SATURATION
0.01 0.03 0.1 1 30.3
Ta=75 C
Ta=25 C
COLLECTOR CURRENT I (A)
I - V
C
1.6
V =2V
1.4
C
1.2
CE
1.0
0.8
0.6
0.4
0.2
COLLECTOR CURRENT I (A)
0
0.2 0.4 0.6 0.8 1.0 1.2
0
BASE-EMITTER VOLTAGE V (V)
BE
Ta=75 C
Ta=-25 C
C
Ta=25 C
Ta=-25 C
BE
Page 3
2001. 6. 30 3/3
KTC3541T
Revision No : 0
f - I
T
C - V
ob
C
CB
1K
500
T
300
100
50
V =10V
CE
30
TRANSITION FREQUENCY f (MHz)
0.01 0.03 0.1 1
COLLECTOR CURRENT I (A)
SAFE OPERATING AREA
5
I MAX.(PULSED)
C
3
I MAX
C
C
1
(CONTINUOUS)
0.5
D
C OPERATION
0.3
0.1
0.05
0.03
COLLECTOR CURRENT I (A)
0.01
SINGLE NONREPETITIVE
*
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
MOUNTED ON A CERAMIC BOARD
2
(600mm `0.8mm)
0.1 0.3 1 10 30 5030.5 5
COLLECTOR-EMITTER VOLTAGE V (V)
10mS*
100mS*
1mS*
100
f=1MHz
50
30
ob
C (pF)
10
5
3
0.3
C
COLLECTOR OUTPUT CAPACITANCE
0.1 0.3 1 10
COLLECTOR-BASE VOLTAGE V (V)
CB
303
Pc - Ta
500µS*
CE
100µ
1.4
1.2
S*
1.0
0.8
C
0.6
P (W)
0.4
0.2
COLLECTOR POWER DISSIPATION
0
20 40 60 80 100 120
0
AMBIENT TEMPERATURE Ta ( C)
MOUNTED ON A
CERAMIC BOARD
2
(600mm `0.8mm)
140 160
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