Page 1
2001. 6. 28 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3535T
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS AND STROBES APPLICATION.
FEATURES
Adoption of MBIT Processes.
High Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
High Speed Switching.
Ultrasmall-Sized Package permitting applied sets to be
made small and slim.
High Allowable Power Dissipation.
Complementary to KTA1535T
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
20 V
Collector-Emitter Voltage
V
CEO
20 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
DC
I
C
3
A
Pulse
I
CP
5
Base Current
I
B
600 mA
Collector Power Dissipation
PC *
0.9 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Package mounted on a ceramic board (600 0.8 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=12V, IE=0
- - 0.1
A
Emitter Cut-off Current
I
EBO
VEB=4V, IC=0
- - 0.1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=10 A, IE=0
20 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEOIC
=1mA, IB=0
20 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=10 A, IC=0
5 - - V
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=1.5A, IB=30mA
- 120 150 mV
Base-Emitter Saturation Voltage
V
BE(sat)
IC=1.5A, IB=30mA
- 0.85 1.2 V
DC Current Gain
h
FE
VCE=2V, IC=500mA
200 - 560
Transition Frequency
f
T
VCE=2V, IC=500mA
- 180 - MHz
Collector Output Capacitance
C
ob
VCB=10V, f=1MHz
- 30 - pF
Switching
Time
Turn-On Time
t
on
- 30 -
nS
Storage Time
t
stg
- 210 -
Fall Time
t
f
- 11 -
E
B
A
F
C
K
G
G
L
J
1. EMITTER
2. BASE
3. COLLECTOR
2
1
3
I
D
H
J
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 0.60
L 0.55
_
2.9 0.2
+
1.6+0.2/-0.1
_
0.70 0.05
+
_
0.4 0.1
+
2.8+0.2/-0.3
_
1.9 0.2
+
0.95
_
0.16 0.05
+
0.00-0.10
0.25+0.25/-0.15
TSM
Marking
Lot No.
Type Name
H D
PW=20µs
<
DC 1%
=
INPUT
V
R
50Ω
V =-5V
BE
20I =-20I =I =1.5A
B1
I
B2
1kΩ
220µF
I
B1
470µF
V =5V
C
B2
OUTPUT
R
L
CC
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2001. 6. 28 2/3
KTC3535T
Revision No : 0
I - V
5
4
C
60mA
3
2
1
COLLECTOR CURRENT I (A)
0
0
0.2 0.4 0.6 0.8 1.0
COLLECTOR-EMITTER VOLTAGE V (V)
h - I
1k
700
FE
500
300
DC CURRENT GAIN h
Ta=75 C
Ta=25 C
Ta=-25 C
C
40mA
FE
CE
I - V
CE
C
25mA
20mA
15mA
10mA
5
40mA
4
C
3
25mA
20mA
15mA
10mA
2
I =0mA
B
CE
5mA
2mA
5mA
1mA
2mA
I =0mA
B
CE
C
V =2V
CE
1
COLLECTOR CURRENT I (A)
0
0
12345
COLLECTOR-EMITTER VOLTAGE V (V)
V - I
CE(sat) C
1K
I /I =20
CB
500
1mA
300
100
50
30
CE(sat)
10
Ta=75 C
Ta=25 C
Ta=-25 C
5
3
VOLTAGE V (mV)
100
0.01 0.03
0.1 0.3 1 3 10
COLLECTOR CURRENT I (A)
V - I
CE(sat) C
1K
I /I =50
CB
500
300
100
50
CE(sat)
30
10
5
VOLTAGE V (mV)
3
Ta=75 C
Ta=25 C
Ta=-25 C
COLLECTOR-EMITTER SATURATION
0.01 0.0310.1 0.3 1 3 10
COLLECTOR CURRENT I (A)
1
COLLECTOR-EMITTER SATURATION
C
0.01 0.03
10
0.1 0.3 1 3 10
COLLECTOR CURRENT I (A)
V - I
BE(sat) C
C
I /I =50
CB
5
3
BE(sat)
1
0.5
0.3
VOLTAGE V (V)
Ta=-25 C
Ta=25 C
Ta=75 C
BASE-EMITTER SATURATION
0.1
0.01 0.03 0.1 0.3 1 3 10
C
COLLECTOR CURRENT I (A)
C
Page 3
2001. 6. 28 3/3
KTC3535T
Revision No : 0
I - V
6.0
V =2V
CE
5.5
5.0
C
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
COLLECTOR CURRENT I (A)
0
0
0.2 0.4 0.6 0.8 1.0
BASE-EMITTER VOLTAGE V (V)
C - V
100
70
50
30
ob
C (pF)
f - I
C
BE
C
1K
V =2V
CE
500
T
T
300
Ta=75 C
Ta=25 C
Ta=-25 C
100
50
30
TRANSITION FREQUENCY f (MHz)
0.01 0.03 0.1 1
BE
ob
CB
COLLECTOR CURRENT I (A)
SAFE OPERATING AREA
C
30.3
10
f=1MHz
C
I MAX.(PULSED)
C
5
3
I MAX
C
(CONTIN-
1
UOUS)
100mS*
D
C OPERATION
10mS*
500µS*
1mS
*
0.5
0.3
10
COLLECTOR OUTPUT CAPACITANCE
135 3010
COLLECTOR-BASE VOLTAGE V (V)
Pc - Ta
1.0
0.8
0.6
C
P (W)
0.4
0.2
COLLECTOR POWER DISSIPATION
0
20 40 60 80 100 120
0
CB
MOUNTED ON A
CERAMIC BOARD
2
(600mm `0.8mm)
140 160
SINGLE NONREPETITIVE
*
0.1
0.05
COLLECTOR CURRENT I (A)
0.02
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
MOUNTED ON A CERAMIC BOARD
2
(600mm `0.8mm)
0.2 1 3 10 20
COLLECTOR-EMITTER VOLTAGE V (V)
CE
AMBIENT TEMPERATURE Ta ( C)
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