Page 1
2001. 6. 26 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3532T
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS APPLICATION.
FEATURES
Adoption of MBIT Processes.
Large Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
High-Speed Switching.
Ultrasmall Package Facilitates Miniaturization in end Products.
High Allowable Power Dissipation.
Complementary to KTA1532T
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
20 V
Collector-Emitter Voltage
V
CEO
20 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
DC
I
C
1.5 A
Pulse
I
CP
3 A
Base Current
I
B
300 mA
Collector Power Dissipation
PC *
0.9 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Package mounted on a ceramic board (600 0.8 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=12V, IE=0
- - 0.1
A
Emitter Cut-off Current
I
EBO
VEB=4V, IC=0
- - 0.1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=10 A, IE=0
20 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEOIC
=1mA, IB=0
20 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=10 A, IC=0
5 - - V
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=750mA, IB=15mA
- 130 200 mV
Base-Emitter Saturation Voltage
V
BE(sat)
IC=750mA, IB=15mA
- 0.85 1.2 V
DC Current Gain
h
FE
VCE=2V, IC=100mA
200 - 560
Transition Frequency
f
T
VCE=2V, IC=300mA
- 210 - MHz
Collector Output Capacitance
C
ob
VCB=10V, f=1MHz
- 20 - pF
Switching
Time
Turn-On Time
t
on
- 40 -
nS
Storage Time
t
stg
- 180 -
Fall Time
t
f
- 20 -
E
B
A
F
C
K
G
G
L
J
1. EMITTER
2. BASE
3. COLLECTOR
2
1
3
I
D
H
J
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 0.60
L 0.55
_
2.9 0.2
+
1.6+0.2/-0.1
_
0.70 0.05
+
_
0.4 0.1
+
2.8+0.2/-0.3
_
1.9 0.2
+
0.95
_
0.16 0.05
+
0.00-0.10
0.25+0.25/-0.15
TSM
Marking
Lot No.
Type Name
H B
INPUT
PW=20µs
DC 1%
50Ω
I
<
=
B2
R
V
R
220µF
V =-5V
BE
20I =-20I =I =750mA
B1
I
B1
B
470µF
V =5V
C
B2
OUTPUT
R
L
CC
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2001. 6. 26 2/3
KTC3532T
Revision No : 0
I - V
C
2.0
1.8
1.6
C
1.4
50mA
30mA
40mA
20mA
1.2
1.0
0.8
0.6
0.4
0.2
COLLECTOR CURRENT I (A)
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
COLLECTOR-EMITTER VOLTAGE V (V)
V - I
CE(sat) C
500
I /I =20
CB
300
100
CE(sat)
50
30
VOLTAGE V (mV)
10
COLLECTOR-EMITTER SATURATION
5
0.01 0.03 0.1 1 30.3
Ta=75 C
Ta=25
Ta=-25 C
C
CE
10mA
8mA
6mA
4mA
2mA
I =0mA
B
CE
h - I
C
FE
1K
FE
500
300
Ta=75 C
Ta=25 C
Ta=-25 C
100
DC CURRENT GAIN h
50
30
0.01 0.03 0.1 1
COLLECTOR CURRENT I (A)
V - I
CE(sat) C
1K
500
300
CE(sat)
100
50
30
VOLTAGE V (mV)
10
COLLECTOR-EMITTER SATURATION
0.01 0.03 0.1 1 30.3
Ta=75 C
Ta=25 C
Ta=-25 C
V =2V
CE
30.3
C
I /I =50
CB
COLLECTOR CURRENT I (A)
V - I
BE(sat) C
10
5
3
BE(sat)
1
0.5
0.3
VOLTAGE V (V)
Ta=-25 C
Ta=75 C
Ta=25 C
BASE-EMITTER SATURATION
0.1
0.01 0.03 0.1 1 30.3
COLLECTOR CURRENT I (A)
C
I /I =50
CB
1.0
0.9
0.8
C
COLLECTOR CURRENT I (A)
I - V
C
V =2V
CE
C
BE
0.7
0.6
0.5
0.4
0.3
Ta=75 C
Ta=25 C
Ta=-25 C
0.2
0.1
COLLECTOR CURRENT I (A)
0
C
0.2 0.4 0.6 0.8 1.0 1.2
0
BASE-EMITTER VOLTAGE V (V)
BE
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2001. 6. 26 3/3
KTC3532T
Revision No : 0
f - I
T
1K
T
500
300
100
50
30
TRANSITION FREQUENCY f (MHz)
0.01 0.03 0.1 1
COLLECTOR CURRENT I (A)
SAFE OPERATING AREA
5
I MAX.(PULSED)
C
3
I MAX
C
(CONTINUOUS)
C
1
0.5
0.3
0.1
SINGLE NONREPETITIVE
*
0.05
0.03
COLLECTOR CURRENT I (A)
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
MOUNTED ON A CERAMIC BOARD
2
(600mm `0.8mm)
0.01
0.1 0.3 1 10 303
COLLECTOR-EMITTER VOLTAGE V (V)
DC OPERATION
C
1
00mS*
C
1mS*
10mS*
100µS*
500µS*
CE
V =2V
CE
C - V
ob
CB
100
f=1MHz
50
30
ob
C (pF)
10
5
3
30.3
COLLECTOR OUTPUT CAPACITANCE
135 3010
COLLECTOR-BASE VOLTAGE V (V)
CB
Pc - Ta
1.4
1.2
1.0
0.8
C
0.6
P (W)
0.4
0.2
COLLECTOR POWER DISSIPATION
0
20 40 60 80 100 120
0
AMBIENT TEMPERATURE Ta ( C)
MOUNTED ON A
CERAMIC BOARD
2
(600mm `0.8mm)
140 160
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