Page 1
2007. 5. 23 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC2876
SILICON NPN TRANSISTOR
EPITAXIAL PLANAR TYPE
Revision No : 1
FOR MUTING AND SWITCHING APPLICATION.
FEATURES
·High Emitter-Base Voltage : V
EBO
=25V(Min.)
·High Reverse h
FE
: Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)
·Low on Resistance : RON=1Ω(Typ.), (I
B
=5mA)
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
*Note) : h
FE
Classification A:200~700, B: 350～1200, C: 700～1200
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
20 V
Emitter-Base Voltage
V
EBO
25 V
Collector Current
I
C
300 mA
Base Current
I
B
60 mA
Collector Power Dissipation
P
C
400 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=50V, IE=0
- - 0.1
μA
Emitter Cut-off Current
I
EBO
VEB=25V, IC=0
- - 0.1
μA
DC Current Gain (Note)
h
FE
*VCE=2V, IC=4mA
200 - 1200
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=30mA, IB=3mA
- 0.042 0.1 V
Base-Emitter Voltage
V
BE
VCE=2V, IC=4mA
- 0.61 - V
Transition Frequency
f
T
VCE=6V, IC=4mA
- 30 - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 4.8 7 pF
Switching
Time
Turn-on Time
t
ON
- 160 -
nS
Storage Time
t
stg
- 500 -
Fall Time
t
f
- 130 -
B
A
DIM
MILLIMETERS
F
H
C
J
1
L
EE
2
M
K
3
N
1. EMITTER
2. COLLECTOR
3. BASE
G
D
TO-92M
O
A
3.20 MAX
B
4.30 MAX
C
0.55 MAX
D
2.40 0.15
E
1.27
F
2.30
G
14.00 0.50
H
0.60 MAX
J
1.05
K
1.45
25
L
M
0.80
0.55 MAX
N
O 0.75
_
+
_
+
Page 2
2007. 5. 23 2/3
KTC2876
Revision No : 1
Page 3
2007. 5. 23 3/3
KTC2876
Revision No : 1
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