Page 1
2010. 11. 11 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC2825D
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
LED DRIVE APPLICATION
FEATURES
·Adoption of MBIT processes.
·
Low collector-to-emitter saturation voltage.
·
Fast switching speed.
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
60 V
Vollector-Emitter Voltage
V
CEO
60 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current
I
C
3 A
Collector Current(Pulse)
I
CP
6 A
Base Current
I
B
600 mA
Collector Power Dissipation
T
a
=25℃
P
C
1 W
T
C
=25℃
P
C
15 W
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current
I
CBO
VCB=40V, IE=0
- - 1
㎂
Emitter Cut-off Current
I
EBO
VEB=4V, IC=0
- - 1
㎂
DC Current Gain
hFE(1)
VCE=2V, I
C
=100㎃
200 - 400
h
FE
(2) VCE=2V, IC=3A
35 - -
Collector-Emitter Saturation Voltage
V
CE(sat) (1)
IC=2A, I
B
=100㎃
- 0.19 0.5
V
V
CE(sat) (2)
I
C
=360㎃, IB=2㎃
- - 0.3
Base-Emitter Saturation Voltage
V
BE(sat)
IC=2A, I
B
=100㎃
- 0.94 1.2 V
Collector Output Capacitance
C
ob
V
CB
=10V, f=1㎒, I
E
=0
- 25 -
㎊
Switching
Time
Turn-on Time
t
on
- 35 -
nS
Storage Time
t
stg
- 470 -
Fall Time
t
f
- 90 -
H
J
DBE
K
DIM MILLIMETERS
A
B
C
D
E
F
G
H
N
J
K
L
L
M
N
_
6.6 0.2
+
_
6.1 0.2
+
_
5.0 0.2
+
_
1.1 0.2
+
_
2.7 0.2
+
_
2.3 0.1
+
1.0 MAX
_
+
2.3 0.2
_
+
0.5 0.1
_
1.0 0.1+
_
+
0.5 0.1
0.95 MAX
_
0.9 0.1
+
M
G
F
123
1. BASE
2. COLLECTOR
3. EMITTER
A
C
F
DPAK
PW=20µs
<
DC 1%
=
INPUT
10I 1=-10I =I =1A
I
B1
R8
I
VR
50
B
B2
100µ
-5V
B2 C
25
470µ
25V
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2010. 11. 11 2/3
KTC2825D
Revision No : 1
I - V
5.0
C
4.0
3.0
2.0
1.0
COLLECOTR CURRENT I (A)
0
0
0.4 0.8 1.2 1.6 2.0
COLLECTOR-EMITTER VOLTAGE V (V)
I - V
2.0
1.8
1.6
C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
COLLECTOR CURRENT I (A)
0
0246
COLLECTOR EMITTER VOLTAGE V (V)
CEC
100mA
C
CE
8mA
7mA
81012
80mA
60mA
40mA
20mA
10mA
5mA
I =0
B
CE
6mA
5mA
4mA
3mA
2mA
1mA
I =0
B
14 16 18 20
CE
I - V
3.2
V =2V
CE
2.8
C
2.4
2.0
1.6
1.2
0.8
0.4
COLLECTOR CURRENT I (A)
0
0.2 0.6 0.8 1.0 1.2
0
0.4
BASE EMITTER VOLTAGE V (V)
h - I
1k
500
FE
300
100
50
30
DC CURRENT GAIN h
10
COLLECTOR CURRENT I (A)
C
BE
FE C
0.30.10.030.01
25 C
-25 C
Ta=75 C
BE
V =2V
CE
1310
C
V - I
BE(sat) C
10
I /I =20
C B
5
3
BE(sat)
0.5
1
Ta=25 C
Ta=-25 C
Ta=75 C
0.3
VOLTAGE V (V)
BASE-EMITTER SATURATION
0.1
0.01 0.03
COLLECTOR CURRENT I (A)
31010.30.1
C
1K
I /I =20
C B
500
300
100
CE(sat)
50
30
VOLTAGE V (mV)
COLLECTOR EMITTER SATURATION
10
0.01
V - I
CE(sat)
Ta=75 C
Ta=-25 C
C
Ta=25 C
0.10.03 0.3 1
COLLECTOR CURRENT I (A)
C
310
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2010. 11. 11 3/3
KTC2825D
Revision No : 1
C - V
ob
100
50
ob
30
10
5
3
OUTPUW CAPACITANCE C (pF)
1
1
3
5
10 30 100
COLLECTOR BASE VOLTAGE V (V)
CB
50 200
CB
f=1MHz
PC - T
C
20
C
15
10
5
1
0
COLLECTOR POWER DISSIPATION P (W)
25 50 75 100 125 150
TEMPERATURE (C )
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