Page 1
2010. 7. 5 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC2036
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
80 V
Collector-Emitter Voltage
V
CEO
60
V
V
CER
100
Emitter-Base Voltage
V
EBO
10 V
Collector Current
I
C
3 A
Base Current
I
B
0.5 A
Collector Power
Dissipation
Ta=25℃
P
C
2
W
Tc=25℃
20
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=80V, IE=0
- - 1
μA
Emitter Cut-off Current
I
EBO
VEB=10V, IC=0
- - 1
μA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=50mA, IB=0
60 - - V
DC Current Gain
hFE(Note) VCE=5V, IC=0.5A
100 - 300
Collector Emitter Saturation Voltage
V
CE(sat)
IC=2A, IB=0.2A
- 0.25 1.0 V
Base-Emitter Voltage
V
BE
VCE=5V, IC=0.5A
- 0.7 1.0 V
Transition Frequency
f
T
VCE=5V, IC=0.5A
- 30 - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 35 - pF
Switching Time
Turn-on Time
t
on
- 0.65 -
μS
Storage Time
t
stg
- 1.3 -
Fall Time
t
f
- 0.65 -
ELECTRICAL CHARA CTERISTICS (Ta=25℃)
GENERAL PURPOSE APPLICATION.
FEATURES
·Low Collector Saturation Voltage
: V
CE(sat)
=1.0V(Max) at IC=2A, IB=0.2A
MAXIMUM RATING (Ta=25℃)
Note : h
FE
Classification Y:100~200, GR:150~300
Page 2
2010. 7. 5 2/2
KTC2036
Revision No : 0
I - V
3.0
2.5
C
2.0
1.5
1.0
0.5
COLLECTOR CURRENT I (A)
300
FE
100
DC CURRENT GAIN h
90
80
70
I =10mA
B
0
0
12345678
COLLECTOR-EMITTER VOLTAGE V (V)
Tc=100 C
Tc=25 C
Tc=-25 C
50
30
10
0.02 0.05 0.1 0.3
COLLECTOR CURRENT I (A)
60
50
40
30
COMMON EMITTER
Tc=25 C
0
h - I
FE
CEC
20
CE
C
COMMON EMITTER
V =5V
CE
13
C
Pc - Ta
40
C
35
30
1
25
20
2
3
15
4
5
10
6
7
5
COLLECTOR POWER DISSIPATION P (W)
8
0
0
25 50 75 100 125 150 175 200
AMBIENT TEMPERATURE Ta ( C)
Tc=Ta
1
INFINITE HEAT SINK
2
300x300x2mm Al
HEAT SINK
3
200x200x2mm Al
HEAT SINK
4
100x100x1mm Al
HEAT SINK
5
100x100x1mm Fe
HEAT SINK
6
50x50x1mm Al
HEAT SINK
7
50x50x1mm Fe
HEAT SINK
8
NO HEAT
SINK
SAFE OPERATING AREA
10
I MAX.(PULSED)*
C
5
I MAX.
C
C
(CONTINUOUS)
3
DC OPERATION
1
0.5
0.3
COLLECTOR CURRENT I (A)
10
SINGLE NONREPETITIVE
*
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
0.1
1310 100
1mS*
10mS*
100mS*
CEO
V MAX.
30550
V - I
CE(sat) C
COLLECTOR-EMITTER VOLTAGE V (V)
CE
1
COMMON EMITTER
I /I =10
C
0.5
B
0.3
CE(sat)
0.1
VOLTAGE V (V)
0.05
0.03
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT I (A)
100 C
c=
T
Tc=25 C
Tc=-25 C
10.30.1 5
C
1030.050.02
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