Page 1
2009. 12. 22 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC2022D/L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 6
GENERAL PURPOSE APPLICATION.
FEATURES
·Low Collector-Emitter Saturation Voltage
: V
CE(sat)
=-2.0V(Max.).
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note : hFE(1) Classification 0:70~140, Y:120~240.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
130 V
Collector-Emitter Voltage
V
CEO
100 V
V
CES
130 V
Emitter-Base Voltage
V
EBO
8 V
Collector Current
I
C
5 A
I
CP
10 A
Base Current
I
B
0.5 A
Collector Power Dissipation (Tc=25℃)
P
C
20 W
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=130V, IE=0
- - 10
μA
I
CEO
VCE=60V, IB=0
- - 1.5
Emitter Cut-off Current
I
EBO
VEB=8V, IC=0
- - 1.0 mA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=50mA, IB=0
100 - - V
DC Current Gain
hFE(1) VCE=5V, IC=1mA
35 - -
hFE(2)(Note) VCE=5V, IC=1A
70 - 240
hFE(3) VCE=5V, IC=4A
20 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=4A, IB=0.4A
- - 2.0 V
Base-Emitter Voltage
V
BE
VCE=5V, IC=1A
- - 1.5 V
Transition Frequency
f
T
VCE=5V, IC=1A
- 30 - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 40 - pF
Q
H
F
123
1. BASE
2. COLLECTOR
3. EMITTER
Q
H
G
123
A
C
F
A
C
F
F
I
J
D
B
M
K
E
P
DIM MILLIMETERS
A
B
C
D
E
F
H
I
O
J
K
L
L
6.60 0.2
6.10 0.2
_
5.0 0.2
+
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
_
+
0.5 0.1
_
+
2.00 0.20
_
+
0.50 0.10
_
+
0.91 0.10M
0.90 0.1O
_
+
1.00 0.10P
0.95 MAXQ
_
+
_
+
_
+
_
+
_
+
_
+
_
+
DPAK
I
J
D
B
K
E
P
L
DIM MILLIMETERS
6.60 0.2
A
6.10 0.2
B
5.0 0.2
C
1.10 0.2
D
9.50 0.6
E
2.30 0.1
F
0.76 0.1
G
1.0 MAX
H
2.30 0.2
I
0.5 0.1
J
K2.0 0.2
0.50 0.1
L
1.0 0.1
P
0.90 MAX
Q
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
Page 2
2009. 12. 22 2/2
KTC2022D/L
Revision No : 6
I - V
5.0
C
4.0
3.0
2.0
1.0
COLLECTOR CURRENT I (A)
100
0
0
1.0 2.0 3.0 4.0 5.0 6.0
COLLECTOR-EMITTER VOLTAGE V (V)
h - I
500
300
FE
100
DC CURRENT GAIN h
COMMON EMITTER
V =5V
CE
10
110100 1000 10000
COLLECTOR CURRENT I (mA)
CCE
80
COMMON EMITTER
Tc=25 C
FE C
Tc=75 C
Tc=25 C
Tc=-25 C
C
60
40
I =10mA
B
CE
V - I
CE(sat) C
2
COMMON EMITTER
I /I =10
C
B
1
0.5
20
0.3
CE(sat)
Tc=25 C
0.1
Tc=75 C
Tc=-25 C
VOLTAGE V (V)
0.05
0.03
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT I (A)
0.30.10.030.01
1310
C
SAFE OPERATING AREA
20
I MAX.(PULSED)
C
10
I MAX.
C
(CONTINUOUS)
5
C
3
1
0.5
SINGLE NONREPETITIVE
*
0.3
COLLECTOR CURRENT I (A)
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
0.1
2510 30
COLLECTOR-EMITTER VOLTAGE V (V)
*
100mS
DC OPERATION
Tc=25 C
10mS
*
*
1mS
*
CEO
V MAX.
100 300
CE
Pc - Ta
24
20
1
16
12
C
P (W)
8
4
COLLECTOR POWER DISSIPATION
2
0
25 50 75 100 125 150
0
AMBIENT TEMPERATURE Ta ( C)
Tc=25 C
1
2
Ta=25 C
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