Page 1
2003. 3. 27 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC2020D/L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 5
GENERAL PURPOSE APPLICATION.
DPAK FOR SURFACE MOUNT APPLICATIONS.
FEATURES
Low Collector Saturation Voltage
: V
CE(sat)
=1.0V(Max.) at IC=2A, IB=0.2A.
Straight Lead (IPAK, "L" Suffix)
Complementary to KTA1040D/L.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
60 V
Emitter-Base Voltage
V
EBO
7 V
Collector Current
I
C
3 A
Base Current
I
B
0.5 A
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
20
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note : hFEClassification Y:100~200, GR:150~300.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=60V, IE=0
- - 100
A
Emitter Cut-off Current
I
EBO
VEB=7V, IC=0
- - 100
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=50mA, IB=0
60 - - V
DC Current Gain
h
FE
(Note) VCE=5V, IC=0.5A
100 - 300 -
Collector Emitter Saturation Voltage
V
CE(sat)
IC=2A, IB=0.2A
- 0.5 1.0 V
Base-Emitter Voltage
V
BE
VCE=5V, IC=0.5A
- 0.7 1.0 V
Transition Frequency
f
T
VCE=5V, IC=0.5A
- 30 - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 35 - pF
Switching Time
Turn-on Time
t
on
- 0.65 -
S
Storage Time
t
stg
- 1.3 -
Fall Time
t
f
- 0.65 -
Q
H
F
123
1. BASE
2. COLLECTOR
3. EMITTER
Q
H
G
123
A
C
K
F
A
C
F
F
I
J
D
B
M
E
P
DIM MILLIMETERS
A
B
C
D
E
F
H
I
O
J
K
L
L
6.60 0.2
6.10 0.2
_
5.0 0.2
+
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
_
+
0.5 0.1
_
+
2.00 0.20
_
+
0.50 0.10
_
+
0.91 0.10M
0.90 0.1O
_
+
1.00 0.10P
0.95 MAXQ
_
+
_
+
_
+
_
+
_
+
_
+
_
+
DPAK
I
J
D
B
K
E
P
L
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 2.0 0.2
L
P
Q
6.60 0.2
6.10 0.2
_
+
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
_
+
0.5 0.1
_
+
0.50 0.1
_
+
1.0 0.1
0.90 MAX
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
Page 2
2003. 3. 27 2/2
KTC2020D/L
Revision No : 5
Loading...