Datasheet KTC1804L, KTC1804D Datasheet (KEC)

2003. 3. 27 1/4

SEMICONDUCTOR

TECHNICAL DATA

KTC1804D/L

EPITAXIAL PLANAR NPN TRANSISTOR

Revision No : 2

HIGH CURRENT SWITCHING APPLICATION.

APPLICATION

Relay drivers, high-speed inverters, converters, and other

general high-current switching applications.

FEATURES

Low Collector Emitter Saturation Voltage.

: V

CE(sat)

=0.4V(Max.) (IC=4A)

High Current and High f

T

: IC=8A, fT=180MHz.

Excellent Linearity of h

FE

High Speed Switching Time.

: f

T

=20nS (Typ.)

Complementary to KTA1204D/L

MAXIMUM RATING (Ta=25 )

CHARACTERISTIC SYMBOL RATING UNIT

Collector-Base Voltage

V

CBO

60 V

Collector-Emitter Voltage

V

CEO

60 V

Emitter-Base Voltag

V

EBO

6 V

Collector Current

DC

I

C

8

A

Pulse

I

CP

12

Collector Power

Dissipation

Ta=25

P

C

1.0 W

Tc=25

20

Junction Temperature

T

j

150

Storage Temperature Range

T

stg

-55 150

A

C

Q

H

F

123

1. BASE

2. COLLECTOR

3. EMITTER

K

F

I

J

D

B

M

E

P

DIM MILLIMETERS

A

B

C

D

E F

H

I

O

J

K

L

_

6.60 0.2

+ _

6.10 0.2

+

_

5.0 0.2

+

_

1.10 0.2

+ _

2.70 0.2

+ _

2.30 0.1

+

1.00 MAX _

2.30 0.2

+

_

0.5 0.1

+ _

+

2.00 0.20

_ +

0.50 0.10

_ +

0.91 0.10M _

+

0.90 0.1O _

+

1.00 0.10P

0.95 MAXQ

DPAK

A C

Q

H

G

F

123

1. BASE

2. COLLECTOR

3. EMITTER

I

J

D

B

K

E

P

L

DIM MILLIMETERS

A

B

C

D

E

F

G

H

I

J

K 2.0 0.2

L

P

Q

_

+

6.60 0.2

_

+

6.10 0.2

_

+

5.0 0.2

_

+

1.10 0.2

_

+

9.50 0.6

_

+

2.30 0.1

_

+

0.76 0.1

1.0 MAX

_

+

2.30 0.2

_

+

0.5 0.1

_

+

_

+

0.50 0.1

_

+

1.0 0.1

0.90 MAX

IPAK

2003. 3. 27 2/4

KTC1804D/L

Revision No : 2

ELECTRICAL CHARACTERISTICS (Ta=25 )

Note : hFEClassification O:100~200, Y:140~280, GR:200~400.

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Collector Cut-off Current

I

CBO

VCB=40V, IE=0

- - 1

A

Emitter Cut-off Current

I

EBO

VEB=4V, IC=0

- - 1

A

DC Current Gain

h

FE

(1) (Note) VCE=2V, IC=0.5A

100 - 400

h

FE

(2) VCE=2V, IC=6A

35 - -

Collector-Emitter Saturation Voltage

V

CE(sat)

IC=4A, IB=0.2A

- 200 400 mV

Base-Emitter Saturation Voltage

V

BE(sat)

IC=4A, IB=0.2A

- 0.95 1.3 mV

Collector-Base Breakdown Voltage

V

(BR)CBO

IC=10 A, IE=0

60 V

Collector-Emitter Breakdown Voltage

V

(BR)CEO

IC=1mA, RBE=

50 V

Emitter-base Breakdown Voltage

V

(BR)EBO

IE=10 A, IC=0

6 - - V

Gain-Bandwidth Product

f

T

VCE=5V, IC=1A

- 180 - MHz

Collector Output Capacitance

C

ob

VCB=10V, IE=0, f=1MHz

- 65 - pF

Switching

Time

Turn On Time

t

on

- 50 -

nS

Storage Time

t

stg

- 500 -

Fall Time

t

f

- 20 -

20µsec

I

B1

I =-I =0.4A

B2

B1

DUTY CYCLE

I

B2

<

1%

=

INPUT

OUTPUT

I

B1

V =25V

CC

6.25Ω

I

B2

2003. 3. 27 3/4

KTC1804D/L

Revision No : 2

I - V

10

C

8

100mA

6

4

2

COLLECTOR CURRENT I (A)

0

0.4 0.8 1.2 1.6 2.0

COLLECTOR-EMITTER VOLTAGE V (V)

I - V

8

V =2V

7

C

6

5

4

3

2

1

COLLECTOR CURRENT I (A)

0

CE

0

0.2 0.4 0.6 1.20.8 1.0

BASE-EMITTER VOLTAGE V (V)

CEC

90mA

BEC

Ta=75 C

80mA

Ta=25 C

Ta=-25 C

BE

70mA

60mA

50mA 40mA

30mA

20mA

10mA

I =0mA

B

CE

I - V

5

4

C

3

30mA

25mA

CEC

20mA

15mA

2

1

COLLECTOR CURRENT I (A)

0

246 810

COLLECTOR-EMITTER VOLTAGE V (V)

h - I

FE C

1k

500

FE

300

100

Ta=75 C

Ta=25 C

Ta=-25 C

50

30

DC CURRENT GAIN h

10

0.01 0.03 0.1 0.3 1 3 10 20

COLLECTOR CURRENT I (mA)

C

10mA

5mA

I =0mA

B

CE

V =2V

CE

f - I

TC

500

V =5V

CE

300

T

100

50

30

10

TRANSITION FREQUENCY f (MHz)

0.02 0.05 0.1 0.3 0.5 1 3 5

COLLECTOR CURRENT I (mA)

C

500

300

100

ob

C (pF)

50

30

10

COLLECTOR OUTPUT CAPACITANCE

1

COLLECTOR-BASE VOLTAGE V (V)

C - V

ob CB

f=1MHz

3 5 10 30 50 100

CB

2003. 3. 27 4/4

KTC1804D/L

Revision No : 2

V - I

CE(sat) C

1K

I /I =20

CB

500

300

CE(sat)

100

50

30

VOLTAGE V (mV)

10

COLLECTOR-EMITTER SATURATION

Ta=25 C

0.30.10.030.01

COLLECTOR CURRENT I (A)

SAFE OPERATING AREA

20

I (Pulse)MAX. *

C

10

5 3

C

1

0.5

0.3

I (DC)MAX.

C

DC OPERATION

Tc=25 C

Ta=25 C

Ta=-25 C

Ta=75 C

1310

C

1mS*

100mS*

10mS*

5

I /I =20

B

C

3

1

BE(sat)

0.5

0.3

VOLTAGE V (V)

BASE-EMITTER SATURATION

0.1

0.03 0.1 0.3 1 3 10

0.01

COLLECTOR CURRENT I (A)

24

20

16

12

C

P (W)

8

V - I

BE(sat) C

Ta=-25 C

Ta=25 C

Pc - Ta

Tc=25 C

Ta=75 C

C

0.1

SINGLE NONREPETITIVE

*

0.05

COLLECTOR CURRENT I (A)

0.03

0.01

PULSE Tc=25 C

CURVES MUST BE DERATED LINEARLY WIHT INCREASE IN TEMPERATURE.

COLLECTOR-EMITTER VOLTAGE V (V)

310.30.1 10 30 100

CE

4

COLLECTOR POWER DISSIPATION

0

Ta=25 C

40 80 120 16020 60 100 140

AMBIENT TEMPERATURE Ta ( C)