Page 1
2005. 3. 14 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTB688B
TRIPLE DIFFUSED PNP TRANSISTOR
Revision No : 1
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Recommended for 45 50W Audio Frequency Amplifier Output Stage.
Complementary to KTD718B.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification R:55 110, O:80 160
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-120 V
Collector-Emitter Voltage
V
CEO
-120 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-10 A
Base Current
I
B
-1 A
Collector Power Dissipation (Tc=25 )
P
C
80 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-120V, IE=0
- - -10
A
Emitter Cut-off Current
I
EBO
VEB=-5V, IC=0
- - -10
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=-50mA, IB=0
-120 - - V
DC Current Gain
h
FE
(Note) VCE=-5V, IC=-1A
55 - 160
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-5A, IB=-0.5A
- - -2.5 V
Base-Emitter Voltage
V
BE
VCE=-5V, IC=-5A
- - -1.5 V
Transition Frequency
f
T
VCE=-5V, IC=-1A
- 10 - MHz
Collector Output Capacitance
C
ob
VCB=-10V, IE=0, f=1MHz
- 280 - pF
A
N
O
H
D
E
d
PP
2
3
1
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
Q
F
I
G
B
K
MILLIMETERS
DIM
A
J
C
R
L
B
C
D
d
E
F
G
H
I
M
J
K
L
M
T
N
O
P
Q
R
T
_
+
15.60 0.20
_
+
4.80 0.20
_
+
19.90 0.20
_
2.00 0.20
+
_
+
1.00 0.20
_
+
3.00 0.20
_
+
3.80 0.20
_
+
3.50 0.20
_
13.90 0.20
+
_
12.76 0.20
+
_
23.40 0.20
+
1.5+0.15-0.05
_
+
16.50 0.30
_
+
1.40 0.20
_
13.60 0.20
+
_
+
9.60 0.20
_
+
5.45 0.30
_
3.20 0.10
+
_
+
18.70 0.20
0.60+0.15-0.05
TO-3P(N)-E
Page 2
2005. 3. 14 2/2
KTB688B
Revision No : 1
IC - V
CE
-10
(A)
C
-8
-300mA
-400mA
-6
-4
-2
COLLECTOR CURRENT I
0
0-2-4
COMMON EMITTER
Tc=25 C
-200mA
-100mA
-50mA
I =-20mA
B
0mA
-6 -8 -10 -12 -14
COLLECTOR-EMITTER VOLTAGE VCE (V)
V
-5
COMMON EMITTER
-3
I /I =10
(V)
-0.5
CE(sat)
-0.3
-0.1
-0.05
-0.03
VOLTAGE V
-0.01
COLLECTOR-EMITTER SATURATION
C B
-1
-0.1 -0.3 -1 -3 -10
-0.03-0.01
CE(sat)
- I
C
Tc=100 C
Tc=-25 C
COLLECTOR CURRENT IC (A)
Tc=25 C
Pc - Ta
(W)
C
100
1
80
60
2
40
3
4
20
5
1
Ta=Tc
INFINITE HEAT SINK
300x300x2mm Al
2
HEAT SINK
200x200x2mm Al
3
HEAT SINK
4
100x100x2mm Al
HEAT SINK
5
NO HEAT SINK
0
120 160 200 240
80400
COLLECTOR POWER DISSIPATION P
AMBIENT TEMPERATURE Ta ( C)
SAFE OPERATING AREA
-30
I MAX(PULSED)
C
I MAX(CONTINUOUS)
-10
C
-5
DC OPERATION
Tc=25 C
(A)
C
-3
-1
-0.5
-0.3
COLLECTOR CURRENT I
SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
-0.1
-1 -3 -10 -30 -100 -300
t=1ms
t=10ms
t=100ms
t=500ms
CEO
V MAX
COLLECTOR EMITTER VOLTAGE VCE (V)
FE
1k
500
300
100
50
30
hFE - I
Tc=100 C
Tc=25 C
Tc=-25 C
C
COMMON EMITTER
V =-5V
CE
DC CURRENT GAIN h
10
-0.1 -0.3 -1 -3 -10
-0.03-0.01
COLLECTOR CURRENT IC (A)
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