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2012. 8. 21 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTB2530
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
HIGH POWER AMPLIFIER
DARLINGTON APPLICATION.
FEATURES
·Complementary to KTD1530
·Recommended for 80W Audio Amplifier Output Stage.
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-160 V
Collector-Emitter Voltage
V
CEO
-150 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-10 A
Base Current
I
B
-1 A
Collector Power Dissipation (Tc=25℃)
P
C
100 W
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-160V, IE=0
- - -100
μA
Emitter Cut-off Current
I
EBO
VEB=-5V, IC=0
- - -100
μA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=-30mA, IB=0
-150 - - V
DC Current Gain
h
FE
VCE=-4V, IC=-7A
15,000 - 30,000
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-7A, IB=-7mA
- - -2.5 V
Base-Emitter Saturation Voltage
V
BE(sat)
IC=-7A, IB=-7mA
- - -3.0 V
Transition Frequency
f
T
VCE=-12V, IC=-2A
- 50 - MHz
Collector Output Capacitance
C
ob
VCB=-10V, IE=0, f=1MHz
- 230 - pF
R
EQUIVALENT CIRCUIT
H
D
E
d
A
N
O
PP
2
1
Q
F
I
G
3
B
K
MILLIMETERS
DIM
A
B
J
C
R
L
C
D
d
E
F
G
H
I
J
M
K
L
M
N
T
O
P
Q
R
T
_
+
15.60 0.20
_
+
4.80 0.20
_
+
19.90 0.20
_
2.00 0.20
+
_
+
1.00 0.20
_
+
3.00 0.20
_
+
3.80 0.20
_
+
3.50 0.20
_
13.90 0.20
+
_
12.76 0.20
+
_
23.40 0.20
+
1.5+0.15-0.05
_
+
16.50 0.30
_
+
1.40 0.20
_
13.60 0.20
+
_
+
9.60 0.20
_
+
5.45 0.30
_
3.20 0.10
+
_
+
18.70 0.20
0.60+0.15-0.05
TO-3P(N)-E
BASE
EMITTER
70Ω
COLLECTO
Page 2
2012. 8. 21 2/3
KTB2530
Revision No : 0
Page 3
2012. 8. 21 3/3
KTB2530
Revision No :0
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