Page 1
2003. 3. 5 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTA539
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
LOW FREQUENCY AMPLIFIER
FEATURES
Collector-Base Voltage : V
CBO
=-60V.
Complementary to KTC815.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-60 V
Collector-Emitter Voltage
V
CEO
-45 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-200 mA
Collector Power Dissipation
P
C
625 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=-100 A, IE=0
-60 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=-10mA, IB=0
-45 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=-10 A, IC=0
5 - - V
Collector Cut-off Current
I
CBO
VCB=-45V, IE=0
- - -0.1
A
Emitter Cut-off Current
I
EBO
VEB=-3V, IC=0
- - -0.1
A
DC Current Gain
hFE(Note) VCE=-1V, IC=-50mA
70 - 240
Base-Emitter Voltage
V
BE
VCE=-1V, IC=-10mA
-0.6 -0.65 -0.9 V
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-150mA, IB=-15mA
- -0.25 -0.5 V
Base-Emitter Saturation Voltage
V
BE(sat)
IC=-150mA, IB=-15mA
- -0.9 -1.2 V
Transition Frequency
f
T
VCE=-10V, IC=-10mA
100 - - MHz
Collector Output Capacitance
C
ob
VCB=-10V, IE=0, f=1MHz
- 6 - pF
Note : hFEClassification O:70~140, Y:120~240
B
K
D
F
1 2
L
E
G
H
F
C
3
M
AJ
1. EMITTER
2. BASE
3. COLLECTOR
C
DIM MILLIMETERS
N
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
E
F
G
H
K
L
0.45
1.00
1.27
0.85
0.45
J
_
+
14.00 0.50
0.55 MAX
2.30
0.45 MAXM
1.00N
TO-92
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2003. 3. 5 2/2
KTA539
Revision No : 0
I - V
C
-180
-160
-140
C
-120
-100
-80
-60
-40
-20
COLLECTOR CURRENT I (mA)
0
0
-5
-10 -15 -20 -25 -30 -35 -40
COLLECTOR-EMITTER VOLTAGE V (V)
V , V - I
CE(sat) C
-3
I =10I
CB
CE
I =-0.8mA
B
I =-0.7mA
B
BE(sat)
I =-0.6mA
B
I =-0.5mA
B
I =-0.4mA
B
I =-0.3mA
B
I =-0.2mA
I =-0.1mA
FE
h - I
1K
500
300
CFE
V =-1V
CE
100
B
50
30
B
DC CURRENT GAIN h
10
-30-10-3-1 -100 -300
CE
-300
COLLECTOR CURRENT I (mA)
I - V
CBE
V =-1V
CE
C
-1
-0.5
-0.3
BE(sat)CE(sat)
-0.1
-0.05
V , V (V)
-0.03
SATURATION VOLTAGE
-0.01
COLLECTOR CURRENT I (mA)
30
10
5
ob
C (pF)
3
V
BE(sat)
V
CE(sat)
C - V
ob
CB
-100-1 -3 -10 -30 -300
C
f=1MHz
I =0
E
-100
C
-30
-10
-3
COLLECTOR CURRENT I (mA)
-1
-0.2 -0.4 -0.6 -0.8 -1.2-1.0
0
BASE EMITTER VOLTAGE V (V)
Pc - Ta
700
600
500
400
C
300
P (mW)
200
BE
100
COLLECTOR POWER DISSIPATION
1
COLLECTOR OUTPUT CAPACITANCE
-1
-3 -5 -10 -30 -50
COLLECTOR BASE VOLTAGE V (V)
CB
0
025 12550 75 100 175150
AMBIENT TEMPERATURE Ta ( C)
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