Page 1
2002. 1. 24 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTA511T
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h
FE
Linearity
: h
FE
(2)=25(Min.) at VCE=-6V, IC=-400mA.
Complementary to KTC611T.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFE(1) Classification 0:70 140, Y:120 240
h
FE
(2) Classification 0:25Min., Y:40Min.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-35V, IE=0
- - -0.1
A
Emitter Cut-off Current
I
EBO
VEB=-5V, IC=0
- - -0.1
A
DC Current Gain
hFE(1) (Note) VCE=-1V, IC=-100mA
70 - 240
hFE(2) (Note) VCE=-6V, IC=-400mA
25 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-100mA, IB=-10mA
- -0.1 -0.25 V
Base-Emitter Voltage
V
BE
VCE=-1V, IC=-100mA
- -0.8 -1.0 V
Transition Frequency
f
T
VCE=-6V, IC=-20mA
- 200 - MHz
Collector Output Capacitance
C
ob
VCB=-6V, IE=0, f=1MHz
- 13 - pF
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-35 V
Collector-Emitter Voltage
V
CEO
-30 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-500 mA
Emitter Current
I
E
500 mA
Collector Power Dissipation
PC *
0.9 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Package mounted on a ceramic board (600 0.8 )
E
G
F
A
G
C
L
1. Q BASE
2. Q , Q EMITTER
3. Q BASE
4. Q COLLECTOR
5. Q COLLECTOR
B
15
2
3
1
2
1
2
2
1
4
I
D
H
JJ
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 0.60
L 0.55
_
2.9 0.2
+
1.6+0.2/-0.1
_
+
0.70 0.05
_
+
0.4 0.1
2.8+0.2/-0.3
_
+
1.9 0.2
0.95
_
+
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
TSV
EQUIVALENT CIRCUIT(TOP VIEW)
54
Marking
h Rank
FE
Type Name
Q1
123
Q2
54
Lot No.
S
123
Page 2
2002. 1. 24 2/2
KTA511T
Revision No : 1
k
I - V
CCE
-600
-7
-6
-500
C
-8
-400
-300
-200
-100
COLLECTOR CURRENT I (mA)
0
0-1-2
COLLECTOR-EMITTER VOLTAGE V (V)
V - I
-3
-1
-0.5
-0.3
CE(sat)
-0.1
-0.05
-0.03
VOLTAGE V (V)
-0.01
COLLECTOR-EMITTER SATURATION
-0.5
Ta=100 C
Ta=25 C
Ta=-25 C
-1 -3 -10 -30 -100 -300 -1k
COMMON
-5
EMITTER
Ta=25 C
-4
-3
-2
I =-1mA
B
0
-3 -4 -5
CE
CCE(sat)
COMMON EMITTER
I /I =10
B
C
1k
500
FE
300
100
Ta=100 C
Ta=25 C
Ta=-25 C
50
30
DC CURRENT GAIN h
10
-0.3
-1 -3 -10 -30 -100 -300 -1
COLLECTOR CURRENT I (mA)
-3k
-1k
-300
B
-100
COMMON
EMITTER
V =-6V
CE
-30
-10
-3
BASE CURRENT I (ยตA)
-1
-0.3
0-0.2
h - I
FE
C
COMMON EMITTER
V =-6V
CE
V =-1V
CE
C
I - V
B
BE
C
Ta=100
Ta=25 C
Ta=-25 C
-0.4 -0.6 -0.8 -1.0 -1.2
COLLECTOR CURRENT I (mA)
C
BASE-EMITTER VOLTAGE V (V)
BE
Pc - Ta
1.2
1.0
0.8
0.6
C
P (W)
0.4
0.2
COLLECTOR POWER DISSIPATION
0
20 40 60 80 100 120
0
AMBIENT TEMPERATURE Ta ( C)
MOUNTED ON A
CERAMIC BOARD
2
(600mm `0.8mm)
140 160
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