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2001. 7. 20 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA2014V
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h
FE
Linearity
: h
FE
(0.1mA)/hFE(2mA)=0.95(Typ.).
Low Noise : NF=1dB(Typ.), 10dB(Max.).
Complementary to KTC4075V.
Very Small Package.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-50 V
Collector-Emitter Voltage
V
CEO
-50 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-150 mA
Base Current
I
B
-30 mA
Collector Power Dissipation
P
C
100 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-50V, IE=0
- - -0.1
A
Emitter Cut-off Current
I
EBO
VEB=-5V, IC=0
- - -0.1
A
DC Current Gain
h
FE
(Note) VCE=-6V, IC=-2mA
70 - 400
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-100mA, IB=-10mA
- -0.1 -0.3 V
Transition Frequency
f
T
VCE=-10V, IC=-1mA
80 - - MHz
Collector Output Capacitance
C
ob
VCB=-10V, IE=0, f=1MHz
- 4 7 pF
Noise Figure NF
VCE=-6V, IC=-0.1mA
f=1kHz, Rg=10k
- 1.0 10 dB
Note : hFEClassification O(2):70 140, Y(4):120 240, GR(6):200 400
E
B
D
3
J
DIM MILLIMETERS
A
B
C
D
E
G
H
K 0.2 0.05
P
_
1.2 0.05
+
_
0.8 0.05
+
_
+
0.5 0.05
_
0.3 0.05
+
_
1.2 0.05
+
_
0.8 0.05
+
0.40
J
_
0.12 0.05
+
_
+
5
A
G
H
K
C
1. EMITTER
2. BASE
3. COLLECTOR
2
1
P
P
Marking
VSM
Type Name
h Rank
S
FE
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2001. 7. 20 2/3
KTA2014V
Revision No : 0
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2001. 7. 20 3/3
KTA2014V
Revision No : 0
(
)
Pc - Ta
200
C
150
100
50
0
0
COLLECTOR POWER DISSIPATION P (mW)
25 50 75 100 125
AMBIENT TEMPERATURE Ta
150
C
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