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2004. 11. 26 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA1962A
TRIPLE DIFFUSED PNP TRANSISTOR
Revision No : 0
POWER AMPLIFIER APPLICATIONS.
FEATURES
High Collector Voltage : V
CEO
=-230V(Min.)
Complementary to KTC5242A.
Recommended for 80W High Fidelity Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFE(1) Classification R:55 110 , O:80 160
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-230 V
Collector-Emitter Voltage
V
CEO
-230 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-15 A
Base Current
I
B
-1.5 A
Collector Power Dissipation (Tc=25 )
P
C
130 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-230V, IE=0
- - -5.0
A
Emitter Cut-off Current
I
EBO
VEB=-5V, IC=0
- - -5.0
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=-50mA, IB=0
-230 - - V
DC Current Gain
h
FE
(1) (Note) VCE=-5V, IC=-1A
55 - 160
h
FE
(2) VCE=-5V, IC=-7A
35 60 -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-8A, IB=-0.8A
- -1.5 -3.0 V
Base-Emitter Voltage
V
BE
VCE=-5V, IC=-7A
- -1.0 -1.5 V
Transition Frequency
f
T
VCE=-5V, IC=-1A
- 30 - MHz
Collector Output Capacitance
C
ob
VCB=-10V, IE=0, f=1MHz
- 360 - pF
A
E
D
d
P
123
Q
F
J
PT
1. BASE
2. COLLECTOR
3. EMITTER
B
K
I
C
H
G
L
M
MILLIMETERSDIM
A 15.9 MAX
B 4.8 MAX
C 20.0 0.3
D 2.0 0.3
d 1.0+0.3/-0.25
E2.0
F 1.0
G 3.3 MAX
H9.0
I4.5
J
K 1.8 MAX
L 20.5 0.5
P 5.45 0.2
Q
T 0.6+0.3/-0.1
_
+
_
+
2.0
_
+
2.8M
_
+
_
Φ3.2 0.2
+
TO-3P(N)
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KTA1962A
Revision No : 0
-12
-10
C
-300
-200
-8
-6
-4
-2
COLLECTOR CURRENT I (A)
0
0
-2 -4 -6 -8 -10 -12 -14 -16
COLLECTOR-EMITTER VOLTAGE V (V)
1k
500
FE
300
100
50
Tc=100 C
Tc=25 C
Tc=-25 C
30
DC CURRENT GAIN h
10
I - V
CEC
-140
h - I
FE C
COMMON EMITTER
V =-5V
CE
COMMON
EMITTER
Tc=25 C
I =-20mA
B
CE
-100
-80
-60
-40
I - V
CBE
-12
COMMON EMITTER
V =-5V
-10
C
CE
-8
-6
Tc=1
-4
-2
COLLECTOR CURRENT I (A)
0
0
-0.4 -0.8 -1.2 -1.6 -2.0
BASE-EMITTER VOLTAGE V (V)
V - I
CE(sat)
3
COMMON EMITTER
I /I =10
B
C
1
0.5
0.3
CE(sat)
0.1
0.05
0.03
VOLTAGE V (V)
00 C
Tc=25 C
Tc=-25 C
BE
C
Tc=25 C
Tc=100 C
Tc=-25 C
3
-0.01 -0.03 -0.1 -0.3
COLLECTOR CURRENT I (A)
V - I
-10
-3
-1
BE(sat)
-0.3
-0.1
VOLTAGE V (V)
BASE-EMITTER SATURATION
-0.03
-0.01 -0.03 -0.1 -0.3
Tc=-25 C
COLLECTOR CURRENT I (A)
BE(sat) C
Tc=25 C
Tc=100 C
-1 -3 -10 -20
C
COMMON EMITTER
I /I =10
B
C
-1 -3 -10 -20
C
COLLECTOR-EMITTER SATURATION
0.01
-0.01 -0.03
-0.1 -0.3
COLLECTOR CURRENT I (A)
f - I
TC
100
COMMON EMITTER
V =-5V
CE
50
T
Tc=25 C
30
10
5
3
1
TRANSITION FREQUENCY f (MHz)
-0.03-0.01
-0.3-0.1
COLLECTOR CURRENT I (A)
-1 -3 -10 -20
C
-1 -3 -10
C
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2004. 11. 26 3/3
KTA1962A
Revision No : 0
Pc - Ta
k
160
120
80
C
P (W)
40
COLLECTOR POWER DISSIPATION
0
0
40 80 120 160 200
AMBIENT TEMPERATURE Ta ( C)
Tc=Ta
INFINITE HEAT SINK
r - t
th
CURVES SHOULD BE APPLIED IN
THERMAL LIMITED AREA.
(SINGLE NONREPETITIVE PULSE)
1
INFINITE HEAT SINK
2
50
NO HEAT SINK
10
th
r ( C/W)
1
0.1
0.01
TRANSIENT THERMAL RESISTANCE
10.10.010.001
PULSE WIDTH t (s)
w
2
1
10 100 1
w
SAFE OPERATING AREA
-50
I MAX(PULSED)
C
-30
I MAX
C
(CONTINUOUS)
-10
C
-5
-3
-1
-0.5
-0.3
* SINGLE NONREPETITIVE
PULSE Tc=25 C
-0.1
COLLECTOR CURRENT I (A)
-0.05
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
-0.03
-2 -5 -10 -30
COLLECTOR-EMITTER VOLTAGE V (V)
DC OPERATION
Tc=25 C
10ms*
10ms*
100ms*
-50 -100 -300
CE
CEO
V MAX
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