Page 1
2003. 3. 27 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA1834D/L
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 5
FEATURES
Low Collector Saturation Voltage.
: V
CE(sat)
=0.16V(Typ.) at (IC=-4A, IB=-0.05A)
Large Collector Current
: I
C
=-10A(dc) IC=-15A(10ms, single pulse)
Complementary to KTC5001D/L.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFE(1) Classification GR:180~390.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-30 V
Collector-Emitter Voltage
V
CEO
-20 V
Emitter-Base Voltag
V
EBO
-6 V
Collector Current
I
C
-10
A
I
CP
-15
Base Current
I
B
-2
A
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
10
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-20V
- - -10
A
Emitter Cut-off Current
I
EBO
VEB=-5V
- - -10
A
Collector-Base Breakdown Voltage
BV
CBO
IC=-50 A
-30 V
Collector-Emitter Breakdown Voltage
BV
CEO
IC=-1mA
-20 V
Emitter-Base Breakdown Voltage
BV
EBO
IE=-50 A
-6 V
DC Current Gain
h
FE
(1) (Note) VCE=-2V, IC=-0.5A
180 - 390
h
FE
(2) VCE=-2V, IC=-4.0A
82 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-4.0A, IB=-0.05A
- -0.16 -0.25 V
Base-Emitter Saturation Voltage
V
BE(sat)
IC=-4A, IB=-0.05A
- -0.9 -1.2 V
Transition Frequency
f
T
VCE=-5V, IE=1.5A, f=50MHz
- 150 - MHz
Collector Output Capacitance
C
ob
VCB=-10V, IE=0, f=1MHz
- 220 - pF
Q
H
F
123
1. BASE
2. COLLECTOR
3. EMITTER
Q
H
G
123
A
C
K
F
A
C
F
F
I
J
D
B
M
E
P
DIM MILLIMETERS
A
B
C
D
E
F
H
I
O
J
K
L
L
6.60 0.2
6.10 0.2
_
5.0 0.2
+
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
_
+
0.5 0.1
_
+
2.00 0.20
_
+
0.50 0.10
_
+
0.91 0.10M
0.90 0.1O
_
+
1.00 0.10P
0.95 MAXQ
_
+
_
+
_
+
_
+
_
+
_
+
_
+
DPAK
I
J
D
B
K
E
P
L
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 2.0 0.2
L
P
Q
6.60 0.2
6.10 0.2
_
+
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
_
+
0.5 0.1
_
+
0.50 0.1
_
+
1.0 0.1
0.90 MAX
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
Page 2
2003. 3. 27 2/3
KTA1834D/L
Revision No : 5
-10
V =-2V
CE
C
-1
-0.1
-0.01
Ta=150 C
COLLECTOR CURRENT I (A)
-0.001
0
-0.2
-0.4 -0.6 -0.8 -1.0 -1.2 -1.4
COLLECTOR EMITTER VOLTAGE V (V)
2K
FE
1K
500
300
DC CURRENT GAIN h
100
50
30
-0.1-0.01 -1
COLLECTOR CURRENT I (A)
I - V
Ta=25 C
h - I
FE
Ta=150 C
Ta=25 C
Ta=-55 C
BEC
Ta=-55 C
C
V =-2V
C
CE
BE
h - I
FE C
1k
Ta=25 C
FE
500
V =-2V
CE
V =-5V
CE
V =-1V
CE
300
100
DC CURRENT GAIN h
50
30
-0.01 -0.1 -1 -10 -20
-1K
COLLECTOR CURRENT I (A)
V - I
CE(sat) C
Ta=25 C
C
-300
-100
CE(sat)
I /I =80
-30
-10
VOLTAGE V (mV)
COLLECTOR SATURATION
BC
40
20
-3
-20-10
-0.01 -0.03 -0.1 -0.3
COLLECTOR CURRENT I (A)
-1 -3 -10 -20
C
V - I
CE(sat) C
-1K
I /I =80
CB
-300
-100
CE(sat)
-30
-10
VOLTAGE V (V)
COLLECTOR SATURATION
Ta=-55 C
Ta=25 C
Ta=150 C
-3
-0.1-0.01 -1 -10 -20
COLLECTOR CURRENT I (A)
C
-1K
I /I =80
BC
-300
-100
BE(sat)
-30
BASE SATURATION
-10
VOLTAGE V (mV)
-3
-0.01
V - I
Ta=-55 C
Ta=25 C
Ta=150 C
-0.1
COLLECTOR CURRENT I (A)
CBE(sat)
-1
C
-10 -20
Page 3
2003. 3. 27 3/3
KTA1834D/L
Revision No : 5
f - I
TE
1k
500
T
300
100
50
30
10
TRANSITION FREQUENCY f (MHz)
0.01 0.03 0.1
EMITTER CURRENT I (A)
C - V
ib EB
10K
ib
5K
3K
1K
500
300
Ta=25 C
V =-5V
CE
f=50MHz
0.3 1 3 10
E
Ta=25 C
f=1MHz
I =0A
C
C - V
ob CE
3K
1K
500
300
ob
C (pF)
100
50
COLLECTOR OUTPUT CAPACITANCE
-0.3-0.1
COLLECTOR-BASE VOLTAGE V (V)
SAFE OPERATING AREA
30
I MAX(PULSE)
C
10
C
3
1
0.3
*
DC OPERATION Ta=25 C
Ta=25 C
f=1MHz
I =0A
E
-3-1 -10 -30 -100
CE
10mS
100mS
*
*
100
EMITTER INPUT CAPACITANCE C (pF)
-0.05
-0.1
-0.3
-1 -3 -10
BASE-EMITTER VOLTAGE V (V)
Pc - Ta
12
1
10
8
6
4
2
2
0
0
COLLECTOR POWER DISSIPATION Pc (W)
25 50 75 100 125 150
AMBIENT TEMPERATURE Ta ( C)
EB
Tc=25 C
1
2
Ta=25 C
0.1
SINGLE NONREPETITIVE
*
COLLECTOR CURRENT I (A)
0.03
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
0.01
0.01 0.03 0.1 0.3 1 3 10 30
COLLECTOR-EMITTER VOLTAGE V (V)
CE
Loading...