Page 1
2008. 9. 23 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTA1759
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
HIGH VOLTAGE APPLICATION.
FEATURES
·High Breakdown Voltage.
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
*Pulse Test : Pulse Width≦300μS, Duty Cycle≦2%
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-400 V
Collector-Emitter Voltage
V
CEO
-400 V
Emitter-Base Voltage
V
EBO
-7 V
Collector Current
I
C
-100 mA
Collector Power Dissipation
P
C
500 mW
PC*
1 W
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
PC* : Mounted on Ceramic Substrate (250㎜2×0.85)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=-50μA, IE=0
-400 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=-1mA, IB=0
-400 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=-50μA, IC=0
-7.0 - - V
Collector Cut off Current
I
CBO
VCB=-400V, IE=0
- - -10
μA
Emitter Cutoff Current
I
EBO
VEB=-6V, IC=0
- - -10
μA
DC Current Gain *
h
FE
VCE=-10V, IC=-10mA
50 - 300
Collector-Emitter Saturation Voltage *
V
CE(sat)
2 IC=-20mA, IB=-2mA
- - -0.5 V
Base-Emitter Saturation Voltage *
V
BE(sat)
IC=-20mA, IB=-2mA
- - -1.5 V
D
F
123
A
H
J
D
K
F
C
G
B
E
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
_
+
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
_
+
1.50 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
SOT-89
Marking
Type Name
AA
Lot No.
Page 2
2008. 9. 23 2/2
KTA1759
Revision No : 0
hFE - I
100
FE
30
DC CURRENT GAIN h
10
-1 -3 -10 -30
COLLECTOR CURRENT IC (mA)
V
CE(sat)
100K
(mV)
30K
CE(sat)
10K
3K
1K
300
100
30
10
13
SATURATION VOLTAGE V
C
-100 -300 -1k
- I
C
30 100
V =-10V
CE
I /I =10
B
C
30010
1K
V
10K
(mV)
BE(sat)
3K
1K
300
100
13
SATURATION VOLTAGE V
BE(sat)
3010 100
- I
C
COLLECTOR CURRENT IC (mA)
Cob - V
100
30
(pF)
10
ob
C
3
1
0.3
0.1 1013 30
COLLECTOR OUTPUT CAPACITANCE
CB
I /I =10
B
C
300
f=1MHz
I =0
E
1K
100
COLLECTOR CURRENT IC (mA)
COLLECTOR BASE VOLTAGE VCB (V)
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