Page 1
2010. 6. 4 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA1572
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
FEATURE
Low Collector-Emitter Saturation Voltage V
CE(sat)
.
High Collector Current Capability : ICand ICP.
Higher Efficiency Leading to Less Heat Generation.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-120 V
Collector-Emitter Voltage
V
CEO
-100 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
DC
I
C
-1
A
Pulse
I
CP
-3
Base Current
I
B
-300 mA
Collector Power Dissipation
P
C
1 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=-100 A
-120 - - V
Collector-Emitter Breakdown Voltage **
V
(BR)CEO
IC=-1mA
-100 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=-100 A
-5 - - V
Collector Cut-Off Current
I
CBO
VCB=-80V, IE=0A
- - -100 nA
Emitter Cut-Off Current
I
EBO
VEB=-4V, IC=0A
- - -100 nA
Collector-Emitter Cut-Off Current
I
CES
V
CES
=-80V, VBE=0V
- - -100 nA
Collector-Emitter Saturation Voltage **
V
CE(sat)
(1) IC=-250mA, IB=-25mA
- - -0.12
V
V
CE(sat)
(2) IC=-500mA, IB=-50mA
- - -0.18
V
CE(sat)
(3) IC=-1A, IB=-100mA
- - -0.32
Base-Emitter Saturation Voltage **
V
BE(sat)
IC=-1A, IB=-100mA
- - -1.1 V
Base-Emitter Voltag
V
BE
VCE=-5V, IC=-1A
- - -1.0 V
DC Current Gain **
hFE(1) VCE=-5V, IC=-1mA
150 - -
hFE(2) VCE=-5V, IC=-250mA
150 - -
hFE(3) VCE=-5V, IC=-500mA
150 - 450
hFE(4) VCE=-5V, IC=-1A
125 - -
Transition Frequency
f
T
VCE=-10V, IC=-50mA, f=100MHz
100 - - MHz
Collector Output Capacitance
C
ob
VCB=-10V, f=1MHz
- 17 - pF
** Pulse Width = 300 S, Duty Cycle 2%.
DIM MILLIMETERS
A
B
D
E
G
H
K
L
P
TO-92L
7.20 MAX
5.20 MAX
2.50 MAX
0.60 MAX
1.27
1.70 MAX
0.55 MAX
14.00 0.50
0.35 MIN
0.75 0.10
4
F
J
M
O
Q
25
1.25
Φ1.50
0.10 MAX
DEPTH:0.2
123
B
A
C
Q
K
FF
M
M
NN
O
H
L
J
D
C
N
G
P
HH
E
D
H
R
S
12.50 0.50R
1.00S
1.15 MAX
+
_
+
_
+
_
1. EMITTER
2. COLLECTOR
3. BASE
Page 2
2010. 6. 4 2/3
KTA1572
Revision No : 0
V - I
CE(sat) C
-1
IC/IB=10
CE(sat)
-1
-10
-1-10
Ta=25 C
-10 -10
VOLTAGE V (V)
-2
-10
COLLECTOR-EMITTER SATURATION
-1
COLLECTOR CURRENT I (mA)
V - I
-10
IC/IB=10
BE(sat)
-1
Ta=-55 C
Ta=100 C
Ta=-55 C
2
-10
CBE(sat)
V - I
CE(sat) C
-1
Ta=25 C
CE(sat)
-1
-10
IC/IB=50
IC/IB=20
VOLTAGE V (V)
-2
-10
3
-10
C
4
COLLECTOR-EMITTER SATURATION
-1
-1-10
-10 -10
COLLECTOR CURRENT I (mA)
h - I
FE C
600
VCE=-10V
FE
Ta=100 C
-10
2
3
-10
C
4
400
Ta=25 C
-10
-1
Ta=100 C
-1
-1-10
-10 -10
VOLTAGE V (V)
BASE-EMITTER SATURATION
COLLECTOR CURRENT I (mA)
V - I
-10
IC/IB=20
Ta=25 C
BE(sat)
-1
VOLTAGE V (V)
BASE-EMITTER SATURATION
-1
-10
-1
-1-10
-10 -10
BE(sat)
Ta=25 C
-10
-10
200
DC CURRENT GAIN h
(A)
C
-1.6
0
-2
-1
Ta=25 C
IB=27mA
2
C
3
-10
C
4
-1.2
-0.8
-0.4
COLLECTOR CURRENT I
2
-10
3
4
0
Ta=-55 C
-1-10
-10 -10
-10
2
COLLECTOR CURRENT I (mA)
I - V
CE
C
IB=40.5mA
IB=31.5mA
IB=36mA
IB=13.5mA
IB=18mA
IB=22.5mA
-10-3
-2 -5-4
IB=45mA
C
3
-10
IB=9mA
IB=4.5mA
4
COLLECTOR CURRENT I (mA)
C
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Page 3
2010. 6. 4 3/3
KTA1572
Revision No : 0
SAFE OPERATING AREA
-10000
IC MAX(PULSE)*
C
IC MAX(CONTINUOUS)
-1000
-100
DC OPERATION(Ta=25 C)
-10
*SINGLE NONREPETTTTVE PULSE Ta=25 C
COLLECTOR CURRENT I (mA)
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN TEMPERATURE
-1
-0.1
100mS*
-1 -10
10mS*
1mS*
-100 -1000
COLLECTOR-EMITTER VOLTAGE V (V)
CE
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