Page 1
2008. 7. 8 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTA1532U
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
LOW FREQUENCY AMPLIFIER DRIVER
FEATURES
·A Collector Current is large.
·Collector Saturation Voltage is low.
V
CE(sat)
≤ -200mV at IC=500mA, ID=-25mA.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-15 V
Collector-Emitter Voltage
V
CEO
-12 V
Emitter-Base Voltage
V
EBO
-6 V
Collector Current
DC
I
C
-1.5
A
Pulse
I
CP
-3
Collector Power Dissipation
PC*
0.2 W
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
* Package Mounted on a Ceramic Board ( 600mm2×0.8mm)
MARKING
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-15V, IE=0
- - -0.1
μA
Emitter Cut-off Current
I
EBO
VEB=-6V, IC=0
- - -0.1
μA
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=-10μA, IE=0
-15 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEOIC
=-1mA, IB=0
-12 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=-10μA, IC=0
-6 - - V
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-500mA, IB=-25mA
- -110 -200 mV
DC Current Gain
h
FE
VCE=-2V, IC=-200mA
270 - 680
Transition Frequency
f
T
VCE=-2V, IE=200mA, f=100MHz*
- 400 - MHz
Collector Output Capacitance
C
ob
VCB=-10V, f=1MHz
- 12 - pF
*Pulsed
E
B
MM
DIM
MILLIMETERS
_
2.00 0.20
+
_
+
1.25 0.15
_
+
0.90 0.10
0.3+0.10/-0.05
_
+
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
_
+
0.42 0.10
0.10 MIN
A
J
G
C
L
2
1
N
K
1. EMITTER
2. BASE
3. COLLECTOR
A
D
B
3
N
C
D
E
G
H
J
K
L
H
M
N
USM
Type Name
2A
Lot No.
Page 2
2008. 7. 8 2/2
KTA1532U
Revision No : 0
fT - I
1000
T
100
TRANSITION FREQUENCY f (MHz)
10
1
CE(sat)
0.010.001
0.1 10
EMITTER CURRENT I (A)
V - I
CE(sat) C
E
Ta=25 C
V
=-2V
CE
f=100MHz
1000
FE
h - I
FE
Ta=25 C
C
Ta=100 C
Ta=-55 C
VCE=-2V
PULSED
100
DC CURRENT GAIN h
1
E
10
0.010.001
0.1 10
COLLECTOR CURRENT I (A)
V - I
BE(sat)
1
CC
C
1
CE(sat)
0.1
VOLTAGE V (V)
Ta=100 C
0.01
Ta=-40 C
0.001
COLLECTOR SATURATION
0.010.001
COLLECTOR CURRENT I (A)
100
Cob
10
ob
C (pF)
Ta=25 C
0.1 10
Cob - V
Cib
1
C
CB
I
=20
C/IB
PULSED
Ta=25 C
=0mA
I
E
f=1MHz
0.1
VOLTAGE V (V)
IC/IB=50
0.01
IC/IB=10
0.001
COLLECTOR SATURATION
0.010.001
COLLECTOR CURRENT I (A)
10
(A)
C
1
0.1
0.01
Ta=100 C
IC/IB=20
Ta=25 C
PULSED
0.1 10
IC - V
BE
Ta=-40 C
1
C
Ta=25 C
VCE=-2V
PULSED
COLLECTOR CURRENT I
1
COLLECTOR OUTPUT CAPACITANCE
COLLECTOR TO BASE VOLTAGE V (V)
10.1 100
10
CB
0.001
0.50 1.5
BASE TO EMITTER VOLTAGE V (V)
1
BE
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