Page 1
2001. 6. 26 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA1532T
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS APPLICATION.
FEATURES
Adoption of MBIT Processes.
Large Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
High-Speed Switching.
Ultrasmall Package Facilitates Miniaturization in end Products.
High Allowable Power Dissipation.
Complementary to KTC3532T.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-20 V
Collector-Emitter Voltage
V
CEO
-20 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
DC
I
C
-1.5 A
Pulse
I
CP
-3 A
Base Current
I
B
-300 mA
Collector Power Dissipation
PC *
0.9 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Package mounted on a ceramic board (600 0.8 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-12V, IE=0
- - -0.1
A
Emitter Cut-off Current
I
EBO
VEB=-4V, IC=0
- - -0.1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=-10 A, IE=0
-20 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEOIC
=-1mA, IB=0
-20 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=-10 A, IC=0
-5 - - V
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-750mA, IB=-15mA
- -120 -180 mV
Base-Emitter Saturation Voltage
V
BE(sat)
IC=-750mA, IB=-15mA
- -0.85 -1.2 V
DC Current Gain
h
FE
VCE=-2V, IC=-100mA
200 - 560
Transition Frequency
f
T
VCE=-2V, IC=-300mA
- 210 - MHz
Collector Output Capacitance
C
ob
VCB=-10V, f=1MHz
- 30 - pF
Switching
Time
Turn-On Time
t
on
- 50 -
nS
Storage Time
t
stg
- 90 -
Fall Time
t
f
- 15 -
E
B
A
F
C
K
G
G
L
J
1. EMITTER
2. BASE
3. COLLECTOR
2
1
3
I
D
H
J
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 0.60
L 0.55
_
2.9 0.2
+
1.6+0.2/-0.1
_
0.70 0.05
+
_
0.4 0.1
+
2.8+0.2/-0.3
_
1.9 0.2
+
0.95
_
0.16 0.05
+
0.00-0.10
0.25+0.25/-0.15
TSM
Marking
Lot No.
Type Name
S B
I
I
B2
R
B
V
R
220µF
V =5V
BE
-20I =20I =I =-750mA
B1
INPUT
PW=20µs
<
DC 1%
=
50Ω
B1
470µF
V =-5V
C
B2
OUTPUT
R
L
CC
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2001. 6. 26 2/3
KTA1532T
Revision No : 0
I - V
C
-2.0
-1.8
-1.6
C
-50mA
-40mA
-30mA
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
COLLECTOR CURRENT I (A)
0
0
-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
COLLECTOR-EMITTER VOLTAGE V (V)
V - I
CE(sat) C
-500
-300
-100
CE(sat)
-50
-30
VOLTAGE V (mV)
-10
-5
COLLECTOR-EMITTER SATURATION
-0.01 -0.03 -0.1 -1 -3-0.3
Ta=75 C
Ta=-25 C
Ta=25 C
CE
-20mA
-10mA
-8mA
-6mA
-4mA
-2mA
I =0mA
B
CE
I /I =20
CB
h - I
FE
1K
500
FE
300
Ta=75 C
Ta=25 C
Ta=-25 C
100
DC CURRENT GAIN h
50
30
-0.01 -0.03 -0.1 -1
COLLECTOR CURRENT I (A)
V - I
CE(sat) C
-1K
-500
-300
CE(sat)
-100
a=75 C
-50
-30
VOLTAGE V (mV)
-10
COLLECTOR-EMITTER SATURATION
-0.01 -0.03 -0.1 -1 -3-0.3
T
Ta=25 C
Ta=-25 C
C
V =-2V
CE
-3-0.3
C
I /I =50
CB
COLLECTOR CURRENT I (A)
V - I
BE(sat) C
-10
-5
-3
BE(sat)
-1
-0.5
-0.3
VOLTAGE V (V)
Ta=-25 C
Ta=75 C
Ta=25 C
BASE-EMITTER SATURATION
-0.1
-0.01 -0.03 -0.1 -1 -3-0.3
COLLECTOR CURRENT I (A)
C
I /I =50
CB
-1.0
-0.9
-0.8
C
COLLECTOR CURRENT I (A)
I - V
BE
C
V =-2V
CE
C
-0.7
-0.6
-0.5
-0.4
Ta=75 C
Ta=25 C
Ta=-25 C
-0.3
-0.2
-0.1
COLLECTOR CURRENT I (A)
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
0
C
BASE-EMITTER VOLTAGE V (V)
BE
Page 3
2001. 6. 26 3/3
KTA1532T
Revision No : 0
f - I
T
1K
500
T
300
100
50
30
TRANSITION FREQUENCY f (MHz)
-0.01 -0.03 -0.1 -1
COLLECTOR CURRENT I (A)
SAFE OPERATING AREA
-5
I MAX.(PULSED)
C
-3
I MAX
C
(CONTINUOUS)
C
-1
-0.5
-0.3
-0.1
-0.05
-0.03
COLLECTOR CURRENT I (A)
SINGLE NONREPETITIVE
*
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
MOUNTED ON A CERAMIC BOARD
2
(600mm `0.8mm)
-0.01
-0.1 -0.3 -1 -10 -30-3
COLLECTOR-EMITTER VOLTAGE V (V)
DC OPERATION
C
1
00mS*
C
1mS*
10mS*
V =-2V
100µS*
500µS*
CE
C - V
ob
CB
CE
100
f=1MHz
50
30
ob
C (pF)
10
5
3
-3-0.3
COLLECTOR OUTPUT CAPACITANCE
-1 -3 -5 -30-10
COLLECTOR-BASE VOLTAGE V (V)
CB
Pc - Ta
1.4
1.2
1.0
0.8
C
0.6
P (W)
0.4
0.2
COLLECTOR POWER DISSIPATION
0
20 40 60 80 100 120
0
AMBIENT TEMPERATURE Ta ( C)
MOUNTED ON A
CERAMIC BOARD
2
(600mm `0.8mm)
140 160
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