Page 1
2007. 6. 13 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA1504S
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h
FE
Linearity
: h
FE
(0.1mA)/hFE(2mA)=0.95(Typ.).
Low Noise : NF=1dB(Typ.), 10dB(Max.).
Complementary to KTC3875S.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFEClassification O:70 140 , Y:120 240 , GR(G):200 400
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-50 V
Collector-Emitter Voltage
V
CEO
-50 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-150 mA
Base Current
I
B
-30 mA
Collector Power Dissipation
P
C
150 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-50V, IE=0
- - -0.1
A
Emitter Cut-off Current
I
EBO
VEB=-5V, IC=0
- - -0.1
A
DC Current Gain
hFE(Note) VCE=-6V, IC=-2mA
70 - 400
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-100mA, IB=-10mA
- -0.1 -0.3 V
Transition Frequency
f
T
VCE=-10V, IC=-1mA
80 - - MHz
Collector Output Capacitance
C
ob
VCB=-10V, IE=0, f=1MHz
- 4.0 7.0 pF
Noise Figure NF
VCE=-6V, IC=-0.1mA
f=1kHz, Rg=10k
- 1.0 10 dB
E
B
LL
MILLIMETERS
DIM
A
B
C
D
3
M
D
E
G
H
J
K
L
M
N
P7
J
C
H
N
2
1
PP
K
1. EMITTER
2. BASE
3. COLLECTOR
A
G
_
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
SOT-23
Marking
Type Name
h Rank
FE
Lot No.
AS
Page 2
2007. 6. 13 2/3
KTA1504S
Revision No : 3
I - V
-240
-200
C
-160
-120
-80
-40
COLLECTOR CURRENT I (mA)
0
0
-1k
-500
-300
CE(sat)
-100
-2.0
-1 -2 -3 -4 -5 -6 -7
COLLECTOR-EMITTER VOLTAGE V (V)
V - I
CE(sat) C
CE C
COMMON EMITTER
Ta=25 C
-1.5
-1.0
-0.5
I =-0.2mA
B
0
CE
COMMON EMITTER
I /I =10
CB
3k
FE
1k
500
300
100
DC CURRENT GAIN h
50
30
-0.1
-0.3 -1 -3 -10 -30 -100 -300
COLLECTOR CURRENT I (mA)
3k
T
1k
500
300
h - I
FE C
Ta=100 C
Ta=25 C
Ta=-25 C
f - I
T
COMMON
EMITTER
C
C
COMMON EMITTER
V =-10V
CE
Ta=25 C
-50
-30
VOLTAGE V (mV)
-10
COLLECTOR-EMITTER SATURATIONBASE CURRENT I (ยตA)
-0.1
-0.3 -1 -3 -10 -30 -100 -300
COLLECTOR CURRENT I (mA)
-1k
COMMON EMITTER
V =-6V
-300
-100
B
CE
-30
-10
-3
-1
-0.3
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
0
BASE-EMITTER VOLTAGE V (V)
Ta=100 C
I - V
BBE
Ta=25 C
Ta=100 C
Ta=-25 C
Ta=25 C
Ta=-25 C
C
BE
100
50
30
TRANSITION FREQUENCY f (MHz)
-0.1
COLLECTOR CURRENT I (mA)
Pc - Ta
200
150
100
C
P (mW)
50
COLLECTOR POWER DISSIPATION
0
0
25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta ( C)
-300-100-30-10-3-1-0.3
C
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2007. 6. 13 3/3
KTA1504S
Revision No : 3
-1000
(mA)
C
-100
SAFE OPERATING AREA
IC MAX(PULSE)*
IC MAX(CONTINUOUS)
1mS*
DC OPERATION(Ta=25 C)
-10
*SINGLE NONREPETITIVE PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN TEMPERATURE
-1
COLLECTOR CURRENT I
-0.1
-1 -10 -100
COLLECTOR-EMITTER VOLTAGE VCE (V)
10mS*
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