Page 1
2010. 1. 28 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTA1271A
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
HIGH CURRENT APPLICATION.
FEATURES
·High h
FE
: h
FE
=100～320.
·Complementary to KTC3203A.
MAXIMUM RATING (Ta=25℃)
TO-92 (F)
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
AJ
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAXM
1.00N
+
_
1. EMITTER
2. COLLECTOR
3. BASE
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-35 V
Collector-Emitter Voltage
V
CEO
-30 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-800 mA
Emitter Current
I
E
800 mA
Collector Power Dissipation
P
C
400 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-35V, IE=0
- - -100 nA
Emitter Cut-off Current
I
EBO
VEB=-5V, IC=0
- - -100 nA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=-10mA, IB=0
-30 - - V
DC Current Gain
hFE(1) (Note) VCE=-1V, IC=-100mA
100 - 320
hFE(2) VCE=-1V, IC=-700mA
35 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-500mA, IB=-20mA
- - -0.7 V
Base-Emitter Voltage
V
BE
VCE=-1V, IC=-10mA
-0.5 - -0.8 V
Transition Frequency
f
T
VCE=-5V, IC=-10mA
- 120 - MHz
Collector Output Capacitance
C
ob
VCB=-10V, IE=0, f=1MHz
- 19 - pF
Note : h
FE
(1) Classification 0:100～200, Y:160～320
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Page 2
2010. 1. 28 2/2
KTA1271A
Revision No : 1
k
I - V
-1k
COMMON EMITTER
Ta=25 C
-800
C
-600
-400
-200
COLLECTOR CURRENT I (mA)
0
0
-1 -2 -3 -4 -5 -6
COLLECTOR-EMITTER VOLTAGE V (V)
V - I
CE(sat) C
-3
-1
-0.5
-0.3
CE(sat)
V (V)
-0.1
-0.05
-0.03
-0.01
COLLECTOR-EMITTER SATURATION
-1 -3 -100-30
Ta=100 C
COLLECTOR CURRENT I (mA)
CEC
-8
I =-1mA
B
CE
COMMON EMITTER
I /I =25
B
C
Ta=25 C
Ta=-25 C
-300 -1k-10
C
h - I
2k
1k
-7
-6
-5
-4
-3
-2
0
FE
500
300
100
50
30
DC CURRENT GAIN h
10
COLLECTOR CURRENT I (mA)
-1k
COMMON
-500
EMITTER
-300
V =-1V
C
CE
Ta=100 C
Ta=25 C
Ta=-25 C
FE
-30-10-3-1
I - V
C
C
COMMON EMITTER
V =-1V
CE
-100 -300
C
BE
-1
-100
-50
-30
Ta=25 C
Ta=-25 C
-10
Ta=100 C
-5
-3
COLLECTOR CURRENT I (mA)
-1
-0.2
-0.4 -0.6 -0.8 -1.0
BASE-EMITTER VOLTAGE V (V)
BE
Pc - Ta
700
600
500
400
300
C
P (mW)
200
100
COLLECTOR POWER DISSIPATION
0
0
25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta ( C)
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