Page 1
2010. 1. 28 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTA1266A
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
·Excellent h
FE
Linearity
: h
FE
(2)=80(Typ.) at VCE=-6V, IC=-150mA
: h
FE(IC
=0.1mA)/hFE(IC=2mA)=0.95(Typ.).
·Low Noise : NF=1dB(Typ.). at f=1kHz.
·Complementary to KTC3198A.
MAXIMUM RATING (Ta=25℃)
TO-92 (F)
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
AJ
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAXM
1.00N
+
_
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note : h
FE
(1) Classification O:70～140, Y:120～240, GR:200～400
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-50 V
Collector-Emitter Voltage
V
CEO
-50 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-150 mA
Base Current
I
B
-50 mA
Collector Power Dissipation
P
C
400 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-50V, IE=0
- - -0.1
μA
Emitter Cut-off Current
I
EBO
VEB=-5V, IC=0
- - -0.1
μA
DC Current Gain
hFE(1) (Note) VCE=-6V, IC=-2mA
70 - 400
hFE(2) VCE=-6V, IC=-150mA
25 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-100mA, IB=-10mA
- -0.1 -0.3 V
Base-Emitter Saturation Voltage
V
BE(sat)
IC=-100mA, IB=-10mA
- - -1.1 V
Transition Frequency
f
T
VCE=-10V, IC=-1mA
80 - - MHz
Collector Output Capacitance
C
ob
VCB=-10V, IE=0, f=1MHz
- 4.0 7.0 pF
Base Intrinsic Resistance rbb'
VCB=-10V, IE=1mA, f=30MHz
- 30 -
Ω
Noise Figure NF
VCE=-6V, I
C
=-0.1mA, Rg=10kΩ, f=1kHz
- 1.0 10 dB
Page 2
2010. 1. 28 2/2
KTA1266A
Revision No : 1
I - V
-240
-200
C
-160
-120
-80
-40
COLLECTOR CURRENT I (mA)
0
0
-1k
-500
-300
CE(sat)
-100
-2.0
-1 -2 -3 -4 -5 -6 -7
COLLECTOR-EMITTER VOLTAGE V (V)
V - I
CE(sat) C
CE C
COMMON EMITTER
Ta=25 C
-1.5
-1.0
-0.5
I =-0.2mA
B
0
CE
COMMON EMITTER
I /I =10
CB
3k
FE
1k
500
300
100
DC CURRENT GAIN h
50
30
-0.1
-0.3 -1 -3 -10 -30 -100 -300
COLLECTOR CURRENT I (mA)
3k
T
1k
500
300
h - I
FE C
Ta=100 C
Ta=25 C
Ta=-25 C
f - I
COMMON EMITTER
V =-6V
CE
V =-1V
CE
C
CT
COMMON EMITTER
V =-10V
CE
Ta=25 C
-50
-30
VOLTAGE V (mV)
-10
COLLECTOR-EMITTER SATURATIONBASE CURRENT I (µA)
-0.3 -1 -3 -10 -30 -100 -300
-0.1
COLLECTOR CURRENT I (mA)
-1k
COMMON EMITTER
V =-6V
-300
-100
B
CE
-30
-10
-3
-1
-0.3
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
0
Ta=100 C
I - V
BBE
=-25 C
Ta=25 C
Ta=100 C
Ta
Ta=25 C
Ta=-25 C
C
100
50
30
TRANSITION FREQUENCY f (MHz)
-0.1
COLLECTOR CURRENT I (mA)
Pc - Ta
700
600
500
400
300
C
P (mW)
200
100
COLLECTOR POWER DISSIPATION
0
0
25 50 75 100 125 150 175
-300-100-30-10-3-1-0.3
C
BASE-EMITTER VOLTAGE V (V)
BE
AMBIENT TEMPERATURE Ta ( C)
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