Page 1
KST92/93
KST92/93
High Voltage Transistor
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Ta=25°C unless otherwise noted
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
(j-a) Thermal Resistance junction to Ambient 357 °C/W
R
TH
• Refer to KSP92/93 for graphs
Electrical Characteristics
Collector Base Voltage
: KST92
: KST93
-300
-200
Collector-Emitter Voltage
: KST92
: KST93
-300
-200
Emitter-Base Voltage -5 V
Collector Current -500 mA
Collector Power Dissipation 350 mW
Storage Temperature 150 °C
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
Collector-Base Breakdown Voltage
: KST92
: KST93
BV
CEO
* Collector-Emitter Breakdown Voltage
: KST92
: KST93
BV
I
CBO
EBO
Emitter-Base Breakdown Voltage IE= -100µA, IC=0 -5 V
Collector Cut-off Current
: KST92
: KST93
I
EBO
h
FE
Emitter Cut-off Current VEB= -5V, IC=0 -0.1 µA
* DC Current Gain
(sat) * Collector-Emitter Saturation Voltage IC= -20mA, IB= -2mA -0.5 V
V
CE
V
(sat) * Base-Emitter Saturation Voltage IC= -20mA, IB= -2mA -0.9 V
BE
C
ob
Output Capacitance
: KST92
: KST93
f
T
Current Gain Bandwidth Product VCE= -20V, IC= -10mA
IC= -100µA, IE=0
IC= -1mA, IB=0
= -200V, IE=0
V
CB
= -160V, IE=0
V
CB
VCE= -10V, IC= -1mA
V
= -10V, IC= -10mA
CE
= -10V, IC= -30mA
V
CE
= -20V, IE=0
V
CB
f=1MHz
-300
-200
-300
-200
-0.25
-0.25
25
40
25
6
8
50 MHz
f=100MHz
* Pulse Test: PW≤300µs, Duty Cycle≤2%
V
V
V
V
V
V
V
V
µA
µA
pF
pF
©2003 Fairchild Semiconductor Corporation Rev. B2, January 2003
Page 2
Marking Code
Type KST92 KST93
Mark 2D 2E
KST92/93
Marking
2D
©2003 Fairchild Semiconductor Corporation Rev. B2, January 2003
Page 3
Package Dimensions
0.40
±0.03
KST92/93
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
©2003 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. B2, January 2003
Page 4
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2003 Fairchild Semiconductor Corporation Rev. I2
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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