Page 1
KST55/56
Driver Transistor
• Collector-Emitter Voltage: V
• Collector Power Dissipation: P
• Complement to KST05/06
PNP Epitaxial Silicon Transistor
= KST55: - 60V
CEO
KST56: - 80V
(max) = 350mW
C
3
2
SOT-23
1. Base 2. Emitter 3. Collector
1
KST55/56
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
(j-a) Thermal Resistance junction to Ambient 357 °C/W
R
TH
Collector Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage -4 V
Collector Current -500 mA
Collector Power Dissipation 350 mW
Storage Temperature 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
BV
EBO
I
CBO
I
CEO
h
FE
(sat) Collector-Emitter Saturation Voltage IC= -100mA, IB= -10mA -0.25 V
V
CE
(on) Base-Emitter On Voltage VCE= -1V, IC= -100mA -1.2 V
V
BE
f
T
* Pulse Test: PW≤300µs, Duty Cycle≤2%
* Collector-Emitter Breakdown Voltage
* Emitter-Base Breakdown Voltage IE= -100µA, IC=0 -4 V
Collector Cut-off Current VCB= -60V, IE=0 -0.1 µA
Collector C u t-o ff C u r re n t
DC Current Gain V
Current Gain Bandwidth Product VCE= -1V, IC= -100mA
Ta=25°C unless otherwise noted
: KST55
: KST56
: KST55
: KST56
Ta=25°C unless otherwise noted
: KST55
: KST56
: KST55
: KST56
= -1mA, IB=0 -60
I
C
V
= -60V, IB=0
CE
= -80V, IB=0
V
CE
= -1V, IC= -10mA
CE
= -1V, IC= -100mA
V
CE
f=100MHz
-60
-80
-60
-80
-80
-0.1
-0.1
50
50
50 MHz
Marking
Marking Code
Type KST55 KST56
Mark 2H 2G
2H
V
V
V
V
V
V
µA
µA
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Page 2
Package Dimensions
0.40
±0.03
KST55/56
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Page 3
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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