Page 1
tm
KST2222A
NPN Epitaxial Silicon Transistor
General Purpose Transistor
KST2222A NPN Epitaxial Silicon Transistor
May 2006
3
2
SOT-23
1
Marking
1P
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings T
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Electrical Characteristics T
Collector-Base Voltage 75 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 6 V
Collector Current 600 mA
Collector Power Dissipation 350 mW
Storage Temperature Range -55 ~ 150 °C
=25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE
V
BE
f
T
C
ob
NF Noise Figure IC = 100µA, V
t
ON
t
OFF
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC = 10µA, IE = 0 75 V
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 40 V
Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 6 V
Collector Cut-off Current V
DC Current Gain * V
= 60V, IE = 0 0.01 µA
CB
= 10V, IC = 0.1mA
CE
V
= 10V, IC = 1mA
CE
V
= 10V, IC = 10mA
CE
V
= 10V, IC = 150mA
CE
V
= 10V, IC = 500mA
CE
35
50
75
100
40
(sat) Collector-Emitter Saturation Voltage * IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
(sat) Base-Emitter Saturation Voltage * IC = 150mA, IB = 15mA
0.6 1.2
IC = 500mA, IB = 50mA
Current Gain Bandwidth Product IC = 20mA, V
Output Capacitance V
= 10V, IE = 0, f = 1MHz 8 pF
CB
RS = 1KΩ, f = 1MHz
Turn On Time V
Turn Off Time V
= 30V, IC = 150mA
CC
V
= 0.5V, I
BE
= 30V, IC = 150mA,
CC
IB1 = IB2 = 15mA
= 20V, f = 100MHz 300 MHz
CE
= 10V
CE
= 15mA
B1
300
0.3
1.0
2.0
4 dB
35 ns
285 ns
V
V
V
V
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
KST2222A Rev. B
Page 2
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Vo ltage
KST2222A NPN Epitaxial Silicon Transistor
0.4
B=10
250
Vce=5V
125C
200
150
hfe, Current Gain
100
50
1 10 100
75C
25C
Collector Current, [mA]
0.3
0.2
0.1
Vce(sat), Saturation Current,[V]
1 10 100
Collector Current, [mA]
125C
75C
25C
Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector - Base Leakage Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Vbe(sat), Saturation Current,[V]
0.3
0.1 1 10 100
25C
75C
125C
Collector C u r re nt, [mA]
B=10
100
VCB = 60V
10
1
Leakage current of Collector - Base(nA)
25 50 75 100 125 150
Temperature, ['C]
Figure 5. Output Capacitance
10
1
[pF], Capacitance
ob
C
0.1
1 10 100
KST2222A Rev. B
VCB [V], C ollec to r -Bas e V oltag e
Figure 6. Power Dissipation vs
Ambient Temperature
IE = 0
f = 1 MHz
0.4
0.3
0.2
- Power Dissipation (W)
D
0.1
P
0.0
0 25 50 75 100 125 150
Temperature, [ OC]
2 www.fairchildsemi.com
Page 3
Mechanical Dimensions
0
F
3
N
0.40
±0.03
KST2222A NPN Epitaxial Silicon Transistor
SOT-23
0.20 MI
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.1
0.38 RE
+0.05
0.12
–0.02
KST2222A Rev. B
Dimensions in Millimeters
3 www.fairchildsemi.com
Page 4
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME AN Y LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUC T OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
KST2222A NPN Epitaxial Silicon Transistor
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are device s or systems which,
(a) are intended for surgical implant into t he bo dy, o r ( b) su ppo rt
or sustain life, or (c) whose failure to per form when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support dev ice
or system whose failure to perfo rm can b e r ea so nab ly e xp e cte d
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and supplementary
No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semi-
Obsolete Not In Production This datasheet contains specifications on a product that has
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
data will be published at a later date. Fairchild Semiconductor
reserves the right to mak e cha ng es at any time wit hou t no tice
in order to improve design.
conductor reserves the right to make changes at any time
without notice in order to improve design.
been discontinued by Fairchild semicond uctor. The dat asheet
is printed for reference information only.
KST2222A Rev. B
Rev. I19
4 www.fairchildsemi.com
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