Page 1
KST10
VHF/UHF Transistor
NPN Epitaxial Silicon Transistor
3
2
SOT-23
1. Base 2. Emitter 3. Collector
1
KST10
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
P
C
T
STG
R
(j-a) Thermal Resistance junction to Ambient 357 °C/W
TH
• Refer to KSP10 for graphs
Collector Base Voltage 30 V
Collector-Emitter Voltage 25 V
Emitter-Base Voltage 3 V
Collector Power Dissipation 350 mW
Storage Temperature 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=4mA, IB=0.4mA 0.5 V
V
CE
V
BE
f
T
C
ob
C
rb
C
c·rbb´
Collector-Base Breakdown Voltage IC=100µA, IE=0 30 V
Collector-Emitter Breakdown Voltage IC=1mA, IB=0 25 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 3 V
Collector Cut-off Current VCB=25V, IE=0 100 nA
Emitter Cut-off Current VBE=2V, IC=0 100 nA
DC Current Gain VCE=10V, IC=4mA 60
Base-Emitter On Voltage VCE=10V, IC=4mA 0.95 V
Current Gain Bandwidth Product VCE=10V, IC=4mA, f=100MHz 650 MHz
Output Capacitance VCB=10V, IE=0, f=1MHz 0.7 pF
Common-Base Feedback Capacitance VCB=10V, IE=0, f=1MHz 0.65 pF
Collector Base Time Constant VCB=10V, IC=4mA, f=31.8MHz 9 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
Marking
3E
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Page 2
Package Dimensions
0.40
±0.03
KST10
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Page 3
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As used herein:
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which, (a) are intended for surgical implant into the body,
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
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