Page 1
Darlington Transistor
• Collector-Emitter Voltage: V
• Collector Power Dissipation: P
CES
=20V
(max)=625mW
C
KSP12
KSP12
1
1. Emitter 2. Base 3. Collector
TO-92
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
P
T
T
CES
EBO
C
J
STG
Collector-Emitter Voltage 20 V
Emitter-Base Voltage 10 V
Collector Power Dissipation 625 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ.... Max. Units
BV
CES
I
CBO
I
CES
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.01mA 1 V
V
CE
(on) Base-Emitter On Voltage VCE=5V, IC=10mA 1.4 V
V
BE
Collector-Emitter Breakdown Voltage IC=100µA, IB=0 20 V
Collector Cut-off Current VCB=15V, IE=0 100 nA
Collector Cut-off Current VCE=15V, IB=0 100 nA
Emitter Cut-off Current VEC=10V, IC=0 100 nA
DC Current Gain VCE=5V, IC=10mA 20K
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Page 2
Typical Characteristics
KSP12
1M
100k
10k
, DC CURRENT GAIN
FE
h
1k
1 10 100 1000
IC [mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
100
10
VCE = 5V
VCE = 5V
VBE(sat)
VCE(sat)
IC = 1000 I
B
10
1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.1
10 100
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
1000
100
VCE = 5V
[mA], COLLECTOR CURRENT
C
I
1
0.0 0.4 0.8 1.2 1.6 2.0 2.4
VBE [V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage Figure 4. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
10
110100
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
Rev. A2, September 2002
Page 3
Package Dimensions
0.46
±0.10
4.58
+0.25
–0.15
KSP12
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Page 4
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C™
I
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
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As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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