Page 1
©2002 Fairchild Semiconductor Corporation Rev. B3, October 2002
KSH31/31C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Electrical Characteristics
TC=25°C unless otherwise noted
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: KSH31
: KSH31C
40
100
V
V
V
CEO
Collector-Emitter Voltage
: KSH31
: KSH31C
40
100
V
V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 3 A
I
CP
Collector Current (Pulse) 5 A
I
B
Base Current 1 A
PC
Collector Dissipation (TC=25°C) 15 W
Collector Dissipation (T
a
=25°C) 1.56 W
T
J
Junction Temperature 150 °C
T
STG
Storage T emperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: KSH31
: KSH31C
I
C
= 30mA, IB = 0 40
100
V
V
I
CEO
Collector Cut-off Current
: KSH31
: KSH31C
V
CE
= 40V, IB = 0
V
CE
= 60V, IB = 0
50
50µAµA
I
CES
Collector Cut-off Current
: KSH31
: KSH31C
V
CE
= 40V, V
BE
= 0
V
CE
= 100V, V
BE
= 0
20
20µAµA
I
EBO
Emitter Cut-off Current V
BE
= 5V, IC = 0 1 mA
hFE
* DC Current Gain V
CE
= 4V, IC = 1A
V
CE
= 4V, IC = 3A
25
10 50
V
CE
(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 375mA 1.2 V
V
BE
(on) * Base-Emitter On Voltage V
CE
= 4A, IC = 3A 1.8 V
f
T
Current Gain Bandwidth Product V
CE
= 10V, IC = 500mA 3 MHz
KSH31/31C
General Purpose Amplifier
Low Speed Switching Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP31 and TIP31C
1.Base 2.Collector 3.Emitter
D-PAK I-PAK
11
Page 2
©2002 Fairchild Semiconductor Corporation Rev. B3, October 2002
KSH31/31C
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Capacitance Figure 4. Turn On Time
Figure 5. Turn Off Time Figure 6. Safe Operating
0.01 0.1 1 10
1
10
100
1000
VCE = 2V
h
FE
, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
1E-3 0.01 0.1 1 10
0.01
0.1
1
10
IC = 10 I
B
VCE(sat)
VBE(sat)
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10 100
1
10
100
1000
C
ob
[pF], CAPACITANCE
VCB[V], COLLECTOR BASE VOLTAGE
0.01 0.1 1 10
0.1
1
tR, VCC=30V
tR, VCC=10V
tC = 10.I
B
tD, VBE(off)=2V
t
R
, t
D
[
µ
s], TURN ON TIME
IC[A], COLLECTOR CURRENT
0.01 0.1 1 10
0.1
1
t
STG
tF, VCC=30V
tC = 10.I
B
tF, VCC(off)=10V
t
F
,t
STG
[
µ
s], TURN OFF TIME
IC[A], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
KSH31
100
µ
s
500
µ
s
KSH31C
1ms
DC
ICP(max)
IC(max)
I
C
[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Page 3
©2002 Fairchild Semiconductor Corporation
KSH31/31C
Rev. B3, October 2002
Typical Characteristics
(Continued)
Figure 7. Power Derating
0 25 50 75 100 125 150 175
0
5
10
15
20
P
C
[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
Page 4
Package Dimensions
KSH31/31C
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B3, October 2002
6.60 ±0.20
2.30 ±0.10
0.50 ±0.10
5.34 ±0.30
0.70 ±0.20
0.60 ±0.20
0.80 ±0.20
9.50 ±0.30
6.10 ±0.20
2.70 ±0.20
9.50 ±0.30
6.10 ±0.20
2.70 ±0.20
MIN0.55
0.76 ±0.10
0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
6.60 ±0.20
0.76 ±0.10
(5.34)
(1.50)
(2XR0.25)
(5.04)
0.89 ±0.10
(0.10) (3.05)
(1.00)
(0.90)
(0.70)
0.91
±0.10
2.30TYP
[2.30±0.20]
2.30TYP
[2.30±0.20]
MAX0.96
(4.34)(0.50) (0.50)
D-PAK
Page 5
©2002 Fairchild Semiconductor Corporation Rev. B3, October 2002
KSH31/31C
Package Dimensions
(Continued)
Dimensions in Millimeters
6.60
±0.20
0.76
±0.10
MAX0.96
2.30TYP
[2.30±0.20]
2.30TYP
[2.30±0.20]
0.60
±0.20
0.80
±0.10
1.80
±0.20
9.30
±0.30
16.10
±0.30
6.10
±0.20
0.70
±0.20
5.34
±0.20
0.50
±0.10
0.50
±0.10
2.30
±0.20
(0.50) (0.50)(4.34)
I-PAK
Page 6
©2002 Fairchild Semiconductor Corporation Rev. I1
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This datasheet contains the design specifications for
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