Page 1
KSH200
D-PAK for Surface Mount Applications
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I “ Suffix)
NPN Epitaxial Silicon Transistor
11
D-PAK I-PAK
1.Base 2.Collector 3.Emitter
KSH200
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
B
I
C
I
CP
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage 40 V
Collector-Emitter Voltage 25 V
Emitter-Base Voltage 8 V
Base Current 1 A
Collector Current (DC) 5 A
Collector Current (Pulse) 10 A
Collector Dissipation (TC = 25°C) 12.5 W
Collector Dissipation (T
= 25°C) 1.4 W
a
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
V
(sus) * Collector Emitter Sustaining Voltage IC=100mA, IB=0 25 V
CBO
I
CEO
I
CBO
I
EBO
h
FE
(sat) * Collector-Emitter Saturation Voltage IC=500mA, IB=50mA
V
CE
(sat) * Base-Emitter Saturation Voltage IC=5A, IB=2A 2.5 V
V
BE
(on) * Base-Emitter On Voltage VCE=1V, IC=2A 1.6 V
V
BE
f
T
C
ob
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Collector Cut-off Current VCB=40V, IE=0 100 nA
Collector Cut-off Current V
=8V, IC=0 100 nA
EBO
Emitter Cut-off Current VCE=1V, IC=500mA 70
* DC Current Gain VCE=1V, IC=2A
V
=2V, IC=5A
CE
45
10
180
0.3
=2A, IB=200mA
I
C
=5A, IB=1A
I
C
0.75
1.8
Current Gain Bandwidth Product VCE=10V, IC=100mA 65 MHz
Output Capacitance VCB=10V, IE=0, f=0.1MHz 80 pF
V
V
V
©2002 Fairchild Semiconductor Corporation Rev. A3, October 2002
Page 2
Typical Characteristics
KSH200
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
1000
100
10
[pF], CAPACITANCE
ob
C
VCE=2V
VCE=1V
10
1
0.1
(sat) [V], SATURATION VO LTA G E
BE
(sat), V
CE
0.01
V
0.01 0.1 1 10
VBE(sat)
V
CE
(sat)
IC=10I
B
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
10
1
0.1
[ns], TURN ON TIME
D
,t
R
t
VCC=30V
=10I
I
C
B
t
R
t
D
1
0.1 1 10 100
VCB[V], COLLECTOR BASE VOLTAGE
0.01
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance Figure 4. Turn On Time
1000
100
[ns], TURN OFF TIME
F
,t
STG
t
10
0.01 0.1 1 10
t
STG
t
F
IC[A], COLLECTOR CURRENT
VCC=30V
=10I
I
C
IB1=-I
B2
100
B
10
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
0.1 1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
100
500
5ms
µ
s
µ
s
1ms
DC
Figure 5. Turn Off Time Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation Rev. A3, October 2002
Page 3
KSH200
Typical Characteristics
20.0
17.5
15.0
12.5
10.0
7.5
5.0
[W], POWER DISSIPATION
C
P
2.5
0.0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 7. Power Derating
(Continued)
©2002 Fairchild Semiconductor Corporation
Rev. A3, October 2002
Page 4
Package Dimensions
6.60 ±0.20
5.34 ±0.30
D-PAK
(4.34)(0.50) (0.50)
0.70 ±0.20
KSH200
2.30 ±0.10
0.50 ±0.10
0.60 ±0.20
0.80 ±0.20
MAX0.96
2.30TYP
[2.30±0.20]
2.70 ±0.20
0.76 ±0.10
2.30TYP
[2.30±0.20]
9.50 ±0.30
6.10 ±0.20
6.10 ±0.20
9.50 ±0.30
2.70 ±0.20
±0.10
0.91
0.89 ±0.10
6.60 ±0.20
(5.34)
(5.04)
(1.50)
(2XR0.25)
0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
(0.90)
(0.70)
(0.10) (3.05)
0.76 ±0.10
MIN0.55
(1.00)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A3, October 2002
Page 5
KSH200
Package Dimensions
6.60
5.34
(0.50) (0.50)(4.34)
±0.20
0.60
±0.10
0.80
MAX0.96
0.76
±0.10
(Continued)
±0.20
±0.20
I-PAK
±0.20
±0.20
0.70
6.10
±0.20
±0.30
1.80
9.30
2.30
0.50
±0.20
±0.10
±0.30
16.10
0.50
2.30TYP
[2.30±0.20]
2.30TYP
[2.30±0.20]
±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A3, October 2002
Page 6
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C™
I
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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