Page 1
KSE800/801/802/803
Monolithic Construction With Built-in BaseEmitter Resistors
• High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC
• Complement to KSE700/701/702/703
KSE800/801/802/803
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
Collector- Base Voltage : KSE800/801
: KSE802/803
V
CEO
Collector-Emitter Voltage : KSE800/801
: KSE802/803
VEBO
IC
IB
PC
TJ
T
STG
Emitter-Base Voltage 5 V
Collector Current 4 A
Base Current 0.1 A
Collector Dissipation (TC=25°C) 40 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
I
CEO
I
CBO
I
EBO
hFE
(sat) Collector-Emitter Saturation Voltage
VCE
(on) Base-Emitter ON Voltage
V
BE
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain : KSE800/802
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
: KSE800/801
= 50mA, IB = 0
I
C
: KSE802/803
: KSE800/801
: KSE802/803
: KSE801/803
: ALL DEVICES
: KSE800/802
: KSE801/803
: ALL DEVICES
: KSE800/802
: KSE801/803
: ALL DEVICES
= 60V, IB = 0
V
CE
= 80V, IB = 0
V
CE
= Rated BV
CB
V
= Rated BV
CB
= 100°C
T
C
= 5V, IC = 0 2 mA
BE
V
= 3V, IC = 1.5A
CE
V
= 3V, IC = 2A
CE
= 3V, IC = 4A
V
CE
= 1.5A, IB = 30mA
I
C
I
= 2A, IB = 40mA
C
= 4A, IB = 40mA
I
C
= 3V, IC = 1.5A
V
CE
V
= 3V, IC = 2A
CE
= 3V, IC = 4A
V
CE
60
80
60
80
CEO
CEO
, IE = 0
, IE = 0
Equivalent Circuit
V
V
V
B
V
R
110
R
20.6
R1
R2
k
Ω≅
k
Ω≅
60
80
100
100
100
500
750
750
100
2.5
2.8
3
2.5
2.5
3
C
E
V
V
µA
µA
µA
µA
V
V
V
V
V
V
©2001 Fairchild Semiconductor Corporation Rev. A3, June 2001
Page 2
Typical Characteristics
KSE800/801/802/803
IB= 450µA
A
µ
= 500
I
B
A
µ
= 300
I
B
A
µ
= 250
I
B
A
µ
= 200
I
B
IB= 150µA
IB= 100µA
IB= 50µA
5
4
3
2
1
(A),COLLECTOR CURRE NT
C
I
0
IB= 400µA
IB= 350µA
012345
VCE(V),COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
100
10
1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
IC = 500 I
VBE(sat)
VCE(sat)
10000
VCE = 3V
1000
100
, DC CURRENT GAIN
FE
h
10
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
1000
B
f=0.1MHZ
IE=0
100
10
[pF], CAPACITANCE
ob
C
1
0.01 0.1 1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
100
10
1
[A], COLLECTOR CURRENT
C
I
0.1
1 10 100 1000
KSE800/801
KSE802/803
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
D.C.
5ms
Figure 4. Collector Output Capacitance
100
µ
s
1ms
60
50
40
30
20
[W], POWER DISSIPATION
C
10
P
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Rev. A3, June 2001
Page 3
Package Demensions
KSE800/801/802/803
TO-126
ø3.20
0.75
1.60
0.75
2.28TYP
[2.28±0.20]
±0.10
3.90
±0.10
±0.10
±0.10
±0.10
8.00
#1
±0.30
2.28TYP
[2.28±0.20]
14.20MAX
±0.30
13.06
±0.20
11.00
(1.00)
±0.20
16.10
0.50
3.25
(0.50)
1.75
+0.10
–0.05
±0.20
±0.20
©2001 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A3, June 2001
Page 4
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A
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2
E
CMOS™
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STAR*POWER is used under license
FAST
FASTr™
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MicroFET™
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®
OPTOPLANAR™
PACMAN™
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Power247™
PowerTrench
®
QFET™
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QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
SMART START™
STAR*POWER™
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SuperSOT™-8
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
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As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2001 Fairchild Semiconductor Corporation Rev. H3
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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