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NPN EPITAXIAL
KSE800/801/803 SILICON DARLINGTON TRANSISTOR
HIGH DC CURRENT GAIN
MIN hFE= 750 @IC= 1.5 and 2.0A DC
MONOLITHIC CONSTRUCTION WITH
BUILT-IN BASE-EMITTER RESISTORS
• Complement to KSE700/701/702/703
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector- Base Voltage
: KSE800/801
: KSE802/803
Collector-Emitter Voltage
: KSE800/801
: KSE802/803
Emitter- Base Voltage
Collector Current
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Test Condition Min Max Unit
Collector Emitter Breakdown Voltage
: KSE800/801
: KSE802/803
Collector Cutoff Current
: KSE800/801
: KSE802/803
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain : KSE800/802
: KSE801/803
: ALL DEVICES
Collector-Emitter Saturation Voltage
: KSE800/802
: KSE801/803
: ALL DEVICES
Base-Emitter On Voltage
: KSE800/802
: KSE801/803
: ALL DEVICES
V
CBO
V
CEO
VEBO
IC
IB
PC
TJ
T
STG
C
60
80
60
80
0.1
40
150
-55 ~ 150
=25°C)
BV
I
I
I
hFE
VCE
VBE(on)
5
4
CEO
CBO
EBO
CEO
(sat)
V
V
V
V
V
A
A
W
°C
°C
IC = 50mA, IB = 0
V
= 60V, IB = 0
CE
V
= 80V, IB = 0
CE
V
= Rated BV
CB
V
= Rated BV
CB
TC = 100°C
V
= 5V, IC = 0
BE
V
= 3V, IC = 1.5A
CE
V
= 3V, IC = 2A
CE
V
= 3V, IC = 4A
CE
IC = 1.5A, IB = 30mA
IC = 2A, IB = 40mA
IC = 4A, IB = 40mA
V
= 3V, IC = 1.5A
CE
V
= 3V, IC = 2A
CE
V
= 3V, IC = 4A
CE
TO-126
1. Emitter 2. Collector 3. Base
60
80
, IE = 0
CEO
, IE = 0
CEO
750
750
100
100
100
100
500
2
2.5
2.8
3
1.2
2.5
3
V
V
µA
µA
µA
µA
mA
V
V
V
V
V
V
Rev. B
1999 Fairchild Semiconductor Corporation
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NPN EPITAXIAL
KSE800/801/803 SILICON DARLINGTON TRANSISTOR
Page 3
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not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
E2CMOS
TM
FACT™
FACT Quiet Series™
®
FAST
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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