Page 1
KSE700/701/702/703
Monolithic Construction With Built-in BaseEmitter Resis t ors
• High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC
• Complement to KSE800/801/802/803
KSE700/701/702/703
1
TO-126
1. Emitter 2.Collector 3.Base
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
Sym-
bol
V
CBO
V
CEO
VEBO
IC
IB
PC
TJ
T
STG
Collector- Base Voltage : KSE700/701
Collector-Emitter Voltage : KSE700/701
Emitter- Base Voltage - 5 V
Collector Current - 4 A
Base Current - 0.1 A
Collector Dissipation (TC=25°C) 40 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Parameter Value
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
I
CEO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage
VCE
(on) Base-Emitter On Voltage
V
BE
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain
TC=25°C unless otherwise noted
- 60
: KSE702/703
- 80
- 60
: KSE702/703
- 80
TC=25°C unless otherwise noted
: KSE700/701
IC = - 10mA, IB = 0 -60
: KSE702/703
: KSE700/701
: KSE702/703
: KSE700/702
: KSE701/703
: ALL DEVICES
= - 60V, IB = 0
V
CE
V
= - 80V, IB = 0
CE
= Rated BV
CB
= Rated BV
V
CB
@T
C
= - 5V, IC = 0 -2 mA
BE
= - 3V, IC = - 1.5A
V
CE
= - 3V, IC = - 2A
V
CE
V
= - 3V, IC = - 4A
CE
: KSE700/702
: KSE701/703
: ALL DEVICES
= - 1.5A, IB = - 30mA
I
C
= - 2A, IB = - 40mA
I
C
I
= - 4A, IB = - 40mA
C
: KSE700/702
: KSE701/703
: ALL DEVICES
= - 3V, IC = - 1.5A
V
CE
= - 3V, IC = - 2A
V
CE
V
= - 3V, IC = - 4A
CE
= 100°C
Unit
s
V
V
V
V
CEO
CEO
, IE = 0
, IE = 0
Equivalent Circuit
B
R
110
R
20.6
C
R1
R2
k
Ω≅
k
Ω≅
E
-80
-100
-100
-100
-500
750
750
100
-2.5
-2.8
-3
-1.2
-2.5
-3
V
V
µA
µA
µA
µA
V
V
V
V
V
V
©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
Page 2
Typical Characteristics
KSE700/701/702/703
-5
-4
-3
-2
[A],COLLECTOR CURRENT
C
I
-1
-0
-0 -1 -2 -3 -4 -5
IB= -700µs
IB= -600µs
IB= -500µs
IB= -1000µs
IB= -900µs
IB= -800µs
= -400
I
B
= -300
I
B
= -200
I
B
IB= -100µs
VCE(V),COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-100
-10
-1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
µ
s
µ
s
µ
s
IC = 500 I
10k
1k
100
, DC CURRENT GAIN
FE
h
10
-0.01 -0.1 -1 - 10
VCE = -3V
IC[A], COLLECTOR CURRENT
1000
B
100
10
[pF], CAPACITANCE
ob
C
1
-0.01 -0.1 -1 -10 -100
f=0.1MHZ
IE=0
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
-100
-10
-1
[A], COLLECTOR CURRENT
C
I
-0.1
-1 -10 -100 -1000
MJE700/701
MJE702/703
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
D.C.
5ms
Figure 4. Collector Output Capacitance
100
µ
s
1ms
60
50
40
30
20
[W], POWER DISSIPATION
C
10
P
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Rev. A2, June 2001
Page 3
Package Demensions
KSE700/701/702/703
TO-126
±0.10
3.90
ø3.20
0.75
1.60
0.75
2.28TYP
[2.28±0.20]
±0.10
±0.10
±0.10
±0.10
8.00
#1
±0.30
2.28TYP
[2.28±0.20]
14.20MAX
±0.30
13.06
±0.20
11.00
(1.00)
±0.20
16.10
0.50
3.25
(0.50)
1.75
+0.10
–0.05
±0.20
±0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
Page 4
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A
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EcoSPARK™
2
E
CMOS™
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FACT Quiet Series™
STAR*POWER is used under license
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FASTr™
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®
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Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2001 Fairchild Semiconductor Corporation Rev. H3
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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