Page 1
Feature
• Low Collector-Emitter Saturation Voltage
• High Current Gain Bandwidth Product : f
• Complement to KSE210
KSE200
=65MHz @ IC=100mA (Min.)
T
KSE200
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
VEBO
IC
PC
TJ
T
STG
Collector-Base Voltage 40 V
Collector-Emitter Voltage 25 V
Emitter- Base Voltage 8 V
Collector Current 5 A
Collector Dissipation (TC=25°C) 15 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
I
CBO
IEBO
hFE
(sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA
V
CE
(sat) Base- Emitter Saturation Voltage IC=5A, IB=1A 2.5 V
V
BE
(on) Base-Emitter On Voltage VCE=1V, IC=2A 1.6 V
V
BE
f
T
C
ob
Collector-Emitter Breakdown Voltage IC=10mA, IB=0 25 V
Collector Cut-off Current VCB=40V, IE=0
Emitter Cut-off Current VBE=8V, IC=0 100 nA
DC Current Gain VCE=1V, IC=500mA
Current Gain Bandwidth Product VCE=10V, IC=100mA 65 MHz
Output Capacitance VCB=10V, IE=0, f=0.1MHz 80 pF
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
=40V, IE=0 @ TJ=125°C
V
CB
=1V, IC=2A
V
CE
V
=2V, IC=5A
CE
=2A, IC=200mA
I
C
=5A, IB=1A
I
C
100
100nAµA
70
4510180
0.3
0.75
1.8
V
V
V
©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001
Page 2
Typical Characteristics
KSE200
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
VCE=1V
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
1000
100
10
[pF], CAPACITANCE
ob
C
VCE = 2V
f=0.1MHZ
IE=0
10
1
VBE(sat)
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10
VCE(sat)
IC = 10 I
B
IC[A], COLLECTOR CURRENT
Base-Emitter Saturation Voltage
100
10
1
[A], COLLECTOR CURRENT
C
I
100
µ
s
500
1ms
µ
s
5ms
DC
1
0.1 1 10 100
VCB[V], COLLECTOR BASE VOLTAGE
Figure 3. Collector Output Capacitance Figure 4. Forward Bias Safe Operating Area
25
20
15
10
5
[W], POWER DISSIPATION
C
P
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2001 Fairchild Semiconductor Corporation
0.1
1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Rev. A1, January 2001
Page 3
Package Demensions
KSE200
TO-126
ø3.20
0.75
1.60
0.75
2.28TYP
[2.28±0.20]
±0.10
3.90
±0.10
±0.10
±0.10
±0.10
8.00
#1
±0.30
2.28TYP
[2.28±0.20]
14.20MAX
±0.30
13.06
±0.20
11.00
(1.00)
±0.20
16.10
0.50
3.25
(0.50)
1.75
+0.10
–0.05
±0.20
±0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001
Page 4
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E
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®
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™
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®
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
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As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2001 Fairchild Semiconductor Corporation Rev. H2
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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