Page 1
KSE180/181/182
Low Power Audio Amplifier
Low Current High Speed Switching Applications
KSE180/181/182
TO-126
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
1
1. Emitter 2.Collector 3.Base
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
ICP
IB
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage : KSE180
: KSE181
: KSE182
Collector-Emitter Voltage : KSE180
: KSE181
: KSE182
60
80
100
40
60
80
Emitter-Base Voltage 7 V
Collector Current (DC) 3 A
Collector Current (Pulse) 6 A
Base Current 1 A
Collector Dissipation (Ta=25°C) 1.5 W
Collector Dissipation (T
=25°C) 12.5 W
C
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA
V
CE
V
(sat) Base-Emitter Saturation Voltage IC = 1.5A, IB = 150mA
BE
(on) Base-Emitter On Voltage V
V
BE
f
T
C
ob
Collector -Emitter Breakdown Voltage
: KSE180
: KSE181
: KSE182
Collector Cut-off Current : KSE180
: KSE181
: KSE182
: KSE180
: KSE181
: KSE182
Emitter Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
I
= 10mA, IB = 0
C
40
60
V
= 60V, IB = 0
CB
V
= 80V, IE = 0
CB
= 100V, IE = 0
V
CB
= 60V, IE = 0 @ TC = 150°C
V
CB
V
= 80V, IE = 0 @ TC = 150°C
CB
= 100V, IE = 0 @ TC = 150°C
V
CB
= 7V, IC = 0 0.1 µA
BE
= 1V, IC = 100mA
CE
= 1V, IC = 500mA
V
CE
V
= 1V, IC = 1.5A
CE
= 1.5A, IB = 150mA
I
C
= 3A, IB = 600mA
I
C
= 3A, IB = 600mA
I
C
= 1V, IC = 500mA 1.2 V
CE
= 10V, IC = 100mA 50 MHz
CE
= 10V, IE = 0, f = 0.1MHz 30 pF
CB
80
50
30
12
250
0.1
0.1
0.1
0.1
0.1
0.1
0.3
0.9
1.7
1.5
2.0
V
V
V
V
V
V
V
V
V
µA
µA
µA
mA
mA
mA
V
V
V
V
V
©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001
Page 2
Typical Characteristics
KSE180/181/182
IB = 160mA
IB = 140mA
IB = 120mA
IB = 100mA
IB = 80mA
IB = 60mA
5
4
3
IB=200mA
IB = 180mA
IB = 40mA
2
[A], COLLECTOR CURRENT
1
C
I
0
012345678910
IB = 20mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
VBE(sat)
VCE(sat)
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1
IC[A], COLLECTOR CURRENT
IC = 10I
1000
100
10
, DC CURRENT GAIN
FE
h
1
10 100 1000 10000
VCE = 5V
VCE=1V
IC[A], COLLECTOR CURRENT
B
1000
100
10
[pF], CAPACITANCE
ob
C
1
0.1 1 10 100
f=0.1MHZ
IE=0
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
ICMAX.(Pulse)
IC MAX.(DC)
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100
Dissipation Limited
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
Figure 4. Collector Output Capacitance
500
100
µ
s
µ
s
5ms
S/B Limited
MAX.
CE
V
KSE181
KSE180
KSE182
16
14
12
10
8
6
4
[W], POWER DISSIPATION
C
P
2
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Rev. A1, January 2001
Page 3
Package Demensions
KSE180/181/182
TO-126
ø3.20
0.75
1.60
0.75
2.28TYP
[2.28±0.20]
±0.10
3.90
±0.10
±0.10
±0.10
±0.10
8.00
#1
±0.30
2.28TYP
[2.28±0.20]
14.20MAX
±0.30
13.06
±0.20
11.00
(1.00)
±0.20
16.10
0.50
3.25
(0.50)
1.75
+0.10
–0.05
±0.20
±0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001
Page 4
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
2
E
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
®
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN
™
POP™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
SMART START™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET
VCX™
®
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2001 Fairchild Semiconductor Corporation Rev. H2
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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