Page 1
KSD73
Low Frequency High Power Amplifier
• Collector-Base Voltage : V
• Collector Current : I
C
= 5A
• Collector Dissipation : P
= 100V
CBO
= 30W (TC=25°C)
C
KSD73
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage 100 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 5 V
Collector Current 5 A
Collector Dissipation (TC=25°C) 30 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 0.5A 2.0 V
V
CE
(sat) Base-Emitter Saturation Voltage IC = 5A, IB = 0.5A 1.5 V
V
BE
f
T
(on) Base-Emitter ON Voltage V
V
BE
Collector-Base Breakdown Voltage IC = 1mA, IE = 0 100 V
Collector-Emitter Breakdown Voltage IC = 20mA, IB = 0 60 V
Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 5 V
Collector Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 100V, IE = 0 5 mA
CB
= 10V, IC = 1.0A 70 240
CE
= 10V, IC = 0.3A 20 MHz
CE
= 10V, IE = 1.0A 0.75 V
CE
hFE Classification
Classification O Y
h
FE
©2000 Fairchild Semiconductor International Rev. A, February 2000
70 ~ 140 120 ~ 240
Page 2
Typical Characteristics
KSD73
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
[A], COLLECTOR CURRENT
0.4
C
I
0.2
0.0
0 2 4 6 8 10 12 14 16 18 20
IB = 14mA
IB = 12mA
IB = 10mA
IB = 8mA
IB = 6mA
IB = 4mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10
VBE(sat)
VCE(sat)
IC[A], COLLECTOR CURRENT
IB = 2mA
IC = 10 I
1000
VCE = 10V
100
, DC CURRENT GAIN
FE
h
10
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
1000
B
f=1MHz
I
=0
E
100
[pF], CAPACITANCE
ob
C
10
110100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
Thermal limita t ion
*10ms
Thermal limita t ion
*200ms
1
[A], COLLECTOR CURRENT
C
I
0.1
1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
S/B limitation
S/B limitation
Figure 4. Collector Output Capacitance
80
70
60
50
40
30
20
[W], POWER DISSIPATION
C
P
10
0
0 25 50 75 1 00 125 150 175
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
Page 3
Package Demensions
±0.10
(1.70)
1.30
±0.20
9.20
(1.46)
9.90
(8.70)
ø3.60
TO-220
±0.20
±0.10
(45°)
(3.70)(3.00)
±0.10
2.80
±0.20
15.90
18.95MAX.
4.50
1.30
±0.20
+0.10
–0.05
KSD73
±0.20
13.08
(1.00)
1.27
2.54TYP
[2.54
±0.10
±0.20
]
10.00
±0.20
1.52
±0.10
0.80
2.54TYP
[2.54
±0.10
±0.20
±0.30
10.08
+0.10
0.50
–0.05
2.40
±0.20
]
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
Page 4
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
2
E
CMOS™
FACT™
FACT Quiet Series™
®
FAST
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2000 Fairchild Semiconductor International Rev. E
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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