Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor KSD5068
DESCRIPTION
·High Breakdown Voltage : V
= 1500V (Min)
CBO
·High Switching Speed
·High Reliability
APPLICATIONS
·Designed for color TV horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(T
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CP
C
T
J
stg
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 6 V
Collector Current- Continuous 8 A
Collector Current-Peak 30 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -55~150
150 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor KSD5068
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
t
f
Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 5.0 V
Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 1.5 V
Collector Cutoff Current VCB= 800V ; IE= 0 10 μA
Emitter Cutoff Current VEB= 4V ; IC= 0 1 mA
DC Current Gain IC= 1A ; VCE= 5V 8
DC Current Gain IC= 6A ; VCE= 5V 5
I
= 6A , IB1= 1.2A ; IB2= -2.4A
Fall Time
C
= 33.3Ω; VCC= 200V
R
L
0.3 μs
isc Website：www.iscsemi.cn
2
Loading...