Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor KSD5061
DESCRIPTION
·High Breakdown Voltage : V
= 1500V (Min)
CBO
·High Switching Speed
·High Reliability
·Built-in Damper Diode
APPLICATIONS
·Designed for color TV horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(T
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CP
C
T
J
stg
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 6 V
Collector Current- Continuous 3.5 A
Collector Current-Peak 10 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -55~150
80 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor KSD5061
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
f
T
V
ECF
t
f
Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 8.0 V
Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 1.5 V
Collector Cutoff Current VCB= 800V ; IE= 0 10 μA
Emitter Cutoff Current VEB= 4V ; IC= 0 40 200 mA
DC Current Gain IC= 0.5A ; VCE= 5V 8
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 3 MHz
C-E Diode Forward Voltage IF= 3.5A 2.0 V
I
= 3A , IB1= 0.8A ; IB2= -1.6A
Fall Time
C
RL= 66.7Ω; VCC= 200V
0.4 μs
isc Website：www.iscsemi.cn
2
Loading...