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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor KSD5056
DESCRIPTION
·High Breakdown Voltage : V
= 1500V (Min)
CBO
·High Switching Speed
·High Reliability
·Built-in Damper Diode
APPLICATIONS
·Designed for color monitor horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(T
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CP
C
T
J
stg
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 6 V
Collector Current- Continuous 5 A
Collector Current-Peak 20 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -55~150
60 W
℃
℃
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor KSD5056
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
V
BE
I
CBO
I
CES
I
EBO
h
FE-1
h
FE-2
V
ECF
(sat)
(sat)
t
f
Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 800 V
Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 5.0 V
Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.5 V
Collector Cutoff Current VCB= 800V ; IE= 0 10 μA
Collector Cutoff Current VCE= 1500V ; VBE= 0 1 mA
Emitter Cutoff Current VEB= 4V ; IC= 0 40 130 mA
DC Current Gain IC= 1A ; VCE= 5V 8
DC Current Gain IC= 4A ; VCE= 5V 3
C-E Diode Forward Voltage IF= 5A 2.0 V
Fall Time IC= 4A , IB1= 0.8A ; IB2= -1.6A 0.3 μs
isc Website：www.iscsemi.cn
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