Page 1
KSD5041
AF Output Amplifier for Electronic Flash Unit
• Low Collector-Emitter Saturation Voltage
• High Performance at Low Supply Voltage
KSD5041
1
1. Emitter 2. Collector 3. Base
TO-92
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 40 V
Collector-Emitter Voltage 20 V
Emitter-Base Voltage 7 V
Collector Current 5 A
Collector Power Dissipation 0.75 W
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC=3A, IB=0.1A 1 V
V
CE
f
T
C
ob
Collector-Emitter Breakdown Voltage IC=1mA, IB=0 20 V
Emitter-Base Breakdown Voltage IC=10µA, IC=0 7 V
Collector Cut-off Current VCB=10V, IE=0 0.1 µA
Emitter Cut-off Current VEB=7V, IC=0 0.1 µA
DC Current Gain VCE=2V, IC=0.5A
Current Gain Bandwidth Product VCE=6V, IC=50mA 150 MHz
Output Capacitance VCB=20V, IE=0, f=1MHz 50 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
V
=2V, IC=2A
CE
180
150
600
hFE Classification
Classification P Q R
h
FE
©2002 Fairchild Semiconductor Corporation Rev. A3, September 2002
180 ~ 270 230 ~ 380 340 ~ 600
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Typical Characteristics
KSD5041
2.4
2.0
1.6
1.2
0.8
[A], COLLECTOR CURRENT
C
I
0.4
0.0
0.0 0.4 0.8 1.2 1. 6 2.0 2.4
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
8
7
6
5
4
3
2
[A], COLLECTOR CURRENT
C
I
1
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VBE[V], BASE-EMITTER VOLTAGE
IB = 7mA
IB = 6mA
IB = 5mA
IB = 4mA
IB = 3mA
IB = 2mA
IB = 1mA
VCE = 10V
T
= 25oC
a
800
700
600
500
400
300
, DC CURRENT GAIN
200
FE
h
100
0
0.01 0.1 1 10
VCE= 2V
℃
T
= 25
a
IC[A], COLLECTOR CURRENT
8
7
6
5
4
3
2
[A], COLLECTOR CURRENT
C
I
1
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IC/IB = 30
=25oC
T
a
VCE(sat)[V], SATURATION VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage
1000
100
10
[pF], CAPACITANCE
ob
C
1
1 10 100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
IE=0
f = 1MHz
Ta = 25oC
400
350
300
250
200
150
100
50
0
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
0.01 0.1 1 10
T
f
VCE = 6V
Ta = 25oC
IC[A], COLLECTOR CURRENT
Rev. A3, September 2002
Page 3
Typical Characteristics
(Continued)
KSD5041
100
I
10
CP
I
C
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
0.1 1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Single pulse
Ta = 25oC
t=10ms
t=1s
1.0
0.8
0.6
0.4
0.2
[W], POWER DISSIPATION
C
P
0.0
0 20 40 60 80 100 120 140 160
Ta[oC], AMBIENT TEMPERATURE
Figure 7. Safe Operating Area Figure 8. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A3, September 2002
Page 4
Package Dimensions
0.46
±0.10
4.58
+0.25
–0.15
KSD5041
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A3, September 2002
Page 5
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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