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KSD471A
Elektronische Bauelemente
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
4.55
FEATURES
z Complement to KSB564A
z Collector Current : I
z Collector Dissipation : P
MAXIMUM RATINGS (T
= 1A
C
= 800mW
C
=25 unless otherwise noted)
A
0.46
±0.1
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
IC
P
Collector Power Dissipation
C
Tj
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Junction Temperature 150
Storage Temperature -55-150
40 V
30 V
5 V
1 A
0.8 W
℃
℃
(1.27 Typ.)
13
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Symbol Test conditions MIN TYP MAX UNIT
℃ unless otherwise specified)
TO-92
±0.2
±0.2
4.5
±0.2
14.3
…0.07
0.43
+0.08
1.25
±0.2
2
2.54
±0.1
3.
5
±0.2
1: E mitter
2: Base
3: C ollector
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Output Capacitance
Transition frequency
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
h
FE
V
CE(sat)
V
BE(sat)
Cob V
VCE=6V, IC=10mA 130 MHz
f
T
=100uA, IE=0 40 V
=10mA, IB=0 30 V
=100μA, IC=0 5 V
VCB=30V, IE=0 0.1 μA
VCE=1V, IC=100mA 70 400
IC=1A, IB=0.1A 0.5 V
IC=1A, IB=0.1A 1.2 V
=6V, IE=0,f=1MHZ 16 pF
CB
CLASSIFICATION OF h
Rank
Range
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
FE
O Y G
70-140 120-240 200-400
01-Jun-2007 Rev. A
Page 1 of 2
Page 2
KSD471A
Elektronische Bauelemente
Characteristics Curve
NPN Silicon
General Purpose Transistor
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2007 Rev. A
Page 2 of2
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