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KSD261
Low Frequency Power Amplifier
• Complement to KSA643
• Collector Power Dissipation : P
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
=500mW
C
KSD261
1
1. Emitter 2. Base 3. Collector
TO-92
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 40 V
Collector-Emitter Voltage 20 V
Emitter-Base Voltage 5 V
Collector Current 500 mA
Collector Power Dissipation 500 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=0.5A, IB=50mA 0.18 0.4 V
V
CE
Collector-Base Breakdown Voltage IC=100µA, IE=0 40 V
Collector-Emitter Breakdown Voltage IC=10mA, IB=0 20 V
Emitter-Base Breakdown Voltage IE=100µA, IC=0 5 V
Collector Cut-off Current VCB=25V, IE=0 0.1 µA
Emitter Cut-off Current VEB=3V, IC=0 0.1 µA
DC Current Gain VCE=1V, IC=0.1A 40 400
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
hFE Classification
Classification R O Y G
h
FE
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400
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Typical Characteristics
KSD261
500
450
400
350
300
250
200
150
100
[mA], COLLECTOR CURRENT
C
I
50
0
012345678910
IB = 2.0mA
IB = 1.8mA
IB = 1.6mA
IB = 1.4mA
IB = 1.2mA
IB = 1.0mA
IB = 0.8mA
IB = 0.6mA
IB = 0.4mA
IB = 0.2mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
1 10 100 1000
IC[mA], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
IC = 10 I
1000
100
, DC CURRENT GAIN
FE
h
10
1 10 100 1000
VCE = 1V
IC[mA], COLLECTOR CURRENT
B
100
10
1
[mA], COLLECTOR CURRENT
C
I
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VCE = 1V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
10
[pF], CAPACITANCE
ob
C
1
1 10 100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
Figure 4. Base-Emitter On Voltage
IE = 0
f = 1MHz
Rev. A2, November 2002
Page 3
Package Dimensions
0.46
±0.10
4.58
+0.25
–0.15
KSD261
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
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As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
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