Page 1
Low Frequency Power Amplifier
• Complement to KSA642
• Collector Power Dissipation : P
=400mW
C
KSD227
KSD227
1
1. Emitter 2. Base 3. Collector
TO-92
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 30 V
Collector-Emitter Voltage 25 V
Emitter-Base Voltage 5 V
Collector Current 300 mA
Collector Power Dissipation 400 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=300mA, IB=30mA 0.14 0.4 V
V
CE
Collector-Base Breakdown Voltage IC=100µA, IE=0 30 V
Collector-Emitter Breakdown Voltage IC=10mA, IB=0 25 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 5 V
Collector Cut-off Current VCB=25V, IE=0 0.1 µA
Emitter Cut-off Current VEB=3V, IC=0 0.1 µA
DC Current Gain VCE=1V, IC=50mA 70 400
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
hFE Classification
Classification O Y G
h
FE
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
70 ~ 140 120 ~ 240 200 ~ 400
Page 2
Typical Characteristics
KSD227
50
45
40
35
30
25
20
15
[mA], COLLECTOR CURRENT
10
C
I
5
0
012345678910
IB = 450µA
IB = 400µA
IB = 350µA
IB = 300µA
IB = 250µA
IB = 200µA
IB = 150µA
IB = 100µA
IB = 50µA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
IC = 10 I
1000
100
, DC CURRENT GAIN
FE
h
10
1 10 100 1000
VCE = 1V
IC[mA], COLLECTOR CURRENT
100
B
VCE = 1V
80
60
40
20
[mA], COLLECTOR CURRENT
C
I
0.0 0.2 0.4 0.6 0.8 1.0
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
20
10
[pF], CAPACITANCE
ob
C
1
1 10 100 300
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Figure 4. Base-Emitter On Voltage
IE = 0
1000
f = 1MHz
100
10
110100
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
VCE = 5V
Rev. A2, September 2002
Page 3
Package Dimensions
4.58
0.46
±0.10
+0.25
–0.15
KSD227
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Page 4
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C™
I
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As used herein:
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which, (a) are intended for surgical implant into the body,
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
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