Page 1
Audio Frequency Amplifier
• Complement to KSB810
KSD1020
KSD1020
1
1.Emitter 2. Collector 3. Base
TO-92S
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
CBO
V
CEO
V
EBO
I
C
* Collector Current (Pulse) 1.0 A
I
CP
P
C
T
J
T
STG
* PW≤10ms, Duty Cycle≤50%
Collector-Base Voltage 30 V
Collector-Emitter Voltage 25 V
Emitter-Base Voltage 5.0 V
Collector Current (DC) 700 mA
Collector Power Dissipation 350 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter T est Condition Min. Typ . Max. Units
I
CBO
I
EBO
h
FE1
h
FE2
V
(on) Base-Emitter On Voltage VCE=6V, IC=10mA 600 640 700 mV
BE
(sat) Collector-Emitter Saturation Voltage IC=700mA, IB=70mA 0.2 0.4 V
V
CE
(sat) Base-Emitter Saturation Voltage IC=700mA, IB=70mA 0.95 1.2 V
V
BE
C
ob
f
T
* Pulse Test: PW≤350µs, Duty Cycle≤ 2%
Collector Cut-off Current VCB=30V, IE=0 100 nA
Emitter Cut-off Current VEB=5V, IC=0 100 nA
* DC Current Gain VCE=1V, IC=100mA
Output Capacitance VCB=6V, IE=0, f=1MHz 13 25 pF
Current Gain Bandwidth Product VCE=6V, IC=10mA 50 170 MHz
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
=1V, IC=700mA
V
CE
120
35
200
140
400
h
Classification
FE1
Classification Y G
h
FE1
©2004 Fairchild Semiconductor Corporation Rev. B2, April 2004
120 ~ 240 200 ~ 400
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Typical Characteristics
KSD1020
20
18
16
14
12
10
8
6
4
[mA], COLLECTOR CURRENT
C
I
2
0
0 1020304050
IB = 140µA
IB = 120µA
IB = 100µA
IB = 80µA
IB = 60µA
IB = 40µA
IB = 20µA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10000
1000
100
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
10
1 10 100 1000 10000
IC[mA], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
IC=10I
1000
100
10
, DC CURRENT GAIN
FE
h
1
1 10 100 1000 10000
VCE= 1V
IC[mA], COLLECTOR CURRENT
B
1000
100
10
1
1 10 100 1000 10000
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
VCE = 6V
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
©2004 Fairchild Semiconductor Corporation
Figure 4. Current Gain-Bandwidth Product
Rev. B2, April 2004
Page 3
Package Dimensions
4.00
(1.10)
0.66 MAX.
±0.20
TO-92S
±0.20
3.70
±0.30
2.31
KSD1020
±0.20
14.47
0.49
±0.10
1.27TYP
[1.27±0.20] [1.27±0.20]
3.72
2.86
±0.20
1.27TYP
±0.20
±0.10
0.77
0.35
+0.10
–0.05
Dimensions in Millimeters
Rev. B2, April 2004©2004 Fairchild Semiconductor Corporation
Page 4
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
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As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2004 Fairchild Semiconductor Corporation Rev. I10
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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