Datasheet ksc5502 Datasheet

KSC5502 NPN Planar Silicon Transistor

High Voltage Power Switch Mode Application

• Small Variance in Storage Time

• Wide Safe Operating Area

• Suitable for Electronic Ballast Application

1

TO-220

1.Base 2.Collector 3.Emitter

KSC5502 — NPN Planar Silicon Transistor

April 2008

Equivalent Circuit

C

B

E

Absolute Maximum Ratings * T

=25°C unless otherwise noted

C

Symbol Parameter Value Units

BV

CBO

BV

CEO

BV

EBO

I

C

I

CP

I

B

I

BP

P

C

T

J

T

STG

EAS Avalanche Energy(Tj=25°C) 2.5 mJ

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ** Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10%

Thermal Characteristics T

Collector-Base Voltage 1200 V Collector-Emitter Voltage 600 V Emitter-Base Voltage 12 V Collector Current (DC) 2 A Collector Current (Pulse)** 4 A Base Current (DC) 1 A Collector Current (Pulse)** 2 A Collector Dissipation(TC=25°C) 50 W Junction Temperature 150 °C

Storage Junction Temperature Range - 65 ~ 150 °C

=25°C unless otherwise noted

a

Symbol Parameter Value Units

R

θJC

R

θJA

Thermal Resistance, Junction to Case 2.5 °C/W Thermal Resistance, Junction to Ambient 85 °C/W

Ordering Information

Part Number Marking Package Packing Method

KSC5502TU J5502 TO-220 TUBE

KSC5502 — High Voltage Power Switch Mode Application

Electrical Characteristics * T

=25°C unless otherwise noted

C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

BV

CEO

BV

EBO

I

CES

I

CEO

I

EBO

h

FE

VCE(sat) Collector-Emitter Saturation Voltage IC=0.2A, IB=0.02A TC=25°C 0.09 0.8 V

VBE(sat) Base-Emitter Saturation Voltage IC=0.4A, IB=0.08A TC=25°C 0.77 1.0 V

C

ib

C

ob

* Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10%

Collector-Base Breakdown Voltage IC=1mA, IE=0 1200 1350 V Collector-Emitter Breakdown Voltage IC=5mA, IB=0 600 750 V Emitter-Base Breakdown Voltage IE=500µA, IC=0 12 13.2 V Collector Cut-off Current V

=1200V , VBE=0 TC=25°C 100 µA

CES

TC=125°C 500

Collector Cut-off Current VCE=600V, IB=0 TC=25°C 100 µA

TC=125°C 500 Emitter Cut-off Current VEB=12V, IC=0 TC=25°C 10 µA DC Current Gain VCE=1V, IC=0.2A TC=25°C 15 28 40

TC=125°C 8 27

VCE=1V, IC=1A TC=25°C 4 8.7

TC=125°C 3 6.6

VCE=2.5V, IC=0.5A TC=25°C 12 20 30

TC=125°C 6 16

TC=125°C 0.13 1.1 V

IC=0.4A, IB=0.08A TC=25°C 0.08 0.6 V

TC=125°C 0.12 1.0 V

IC=1A, IB=0.2A TC=25°C 0.19 1.5 V

TC=125°C 0.35 3.0 V

TC=125°C 0.65 0.9 V

IC=1A, IB=0.2A TC=25°C 0.83 1.2 V

TC=125°C 0.70 1.0 V Input Capacitance VEB=8V, IC=0, f=1MHz 410 500 pF Output Capacitance VCB=10V, IE=0, f=1MHz 20 100 pF

KSC5502 — High Voltage Power Switch Mode Application

Electrical Characteristics T

=25°C unless otherwise noted

C

Symbol Parameter Test Condition Min Typ. Max. Unit s

VCE(DSAT) Dynamic Saturation Voltage IC=0.4A, IB1=80mA

VCC=300V

IC=1A, IB1=200mA VCC=300V

RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=20s) t

ON

Turn On Time IC=0.4A, IB1=80mA

IB2=0.2A, VCC=300V RL = 750Ω

t

OFF

t

ON

t

OFF

Turn Off Time TC=25°C 3.3 4.0 µs

Turn On Time IC=1A, IB1=160mA

IB2=160mA, V

=300V

CC

Turn Off Time TC=25°C 4.3 5.0 µs

RL = 300Ω

INDUCTIVE LOAD SWITCHING (VCC=15V) t

STG

Storage Time IC=0.4A, IB1=80mA

IB2=0.2A, VZ=300V LC=200uH

t

F

t

C

t

STG

t

F

t

C

Fall Time TC=25°C 130 200 ns

Cross-over Time TC=25°C 210 350 ns

Storage Time IC=0.8A, IB1=160mA

IB2=160mA, V

=300V

CC

Fall Time TC=25°C 170 250 ns

LC=200uH

Cross-over Time TC=25°C 300 600 ns

@ 1µs 11 V @ 3µs 8 V @ 1µs 23 V @ 3µs 13 V

TC=25°C 250 350 ns TC=125°C 260 ns

TC=125°C 3.8 µs TC=25°C 220 450 ns TC=125°C 250 ns

TC=125°C 5.0 µs

TC=25°C 1.4 2.0 µs TC=125°C 1.7 µs

TC=125°C 80 ns

TC=125°C 130 ns TC=25°C 4.9 5.5 µs TC=125°C 5.3 µs

TC=125°C 340 ns

TC=125°C 810 ns

Typical Characteristics

KSC5502 — High Voltage Power Switch Mode Application

3

2

1

[A], COLLECTOR CURRENT

C

I

0

01234567

VCE[V], COLLECTOR EMITTER VOLTAGE

900mA 800mA 700mA 600mA

500mA 400mA 300mA

200mA

IB=100mA

1A

100

TJ=125oC

TJ=25oC

10

, DC CURRENT GAIN

FE

h

1

1 10 100 1000

IC[mA], COLLECTOR CURRENT)

Figure 1. Static Characteristic Figure 2. DC current Gain

IC=10I

IC=5I

10

B

1

(V), VOLTAGE

CE(sat)

V

0.1

TJ=125oC

10

1

(V), VOLTAGE

CE(sat)

V

0.1

TJ=25oC

B

VCE=1V

TJ=125oC

TJ=25oC

0.01 1 10 100 1000

IC(mA), COLLECTOR CURRENT

0.01 1 10 100 1000

IC(mA), COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage

2

TJ=25oC

1.5A

1.0A

1

[V], VOLTAGE

CE

V

0

1 10 100 1k

0.4A

IC=0.2A

IB[mA], BASE CURRENT

2.0A

IC=5I

B

1

[V], VOLTAGE

BE

V

0.1 1 10 100 1k

IC[mA], COLLECTOR CURRENT

TJ=25oC

TJ=125oC

Figure 5. Typical Collector Saturation Voltage Figure 6. Base-Emitter Saturation Voltage

Typical Characteristics (Continued)

KSC5502 — High Voltage Power Switch Mode Application

IC=10I

B

1

[V], VOLTAGE

BE

V

0.1 1 10 100 1k

TJ=25oC

TJ=125oC

IC[mA], COLLECTOR CURRENT

Figure 7. Base-Emitter Saturation Voltage

TJ=25oC

IC=5IB1=2I

B2

VCC=300V PW=20us

TJ=125oC

5

4.5

4

3.5

3

2.5

(us),TIM E

2

OFF

t

1.5

10001000

900 800

IC=5IB1=2I VCC=300V PW=20us

B2

700 600

500

400

300

[ns],TIM E

ON

t

200

TJ=125oC

TJ=25oC

100100

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1123

IC[A], COLLECTOR CURRENT

Figure 8. Resistive Switching Time, t

10001000

900 800

IC=5IB1=5I VCC=300V PW=20us

B2

700 600

500

400

300

[ns],TIM E

ON

t

200

TJ=125oC

on

TJ=25oC

11

0.3 0.4 0.5 0.6 0.7 0.80.9 1123

IC[A], COLLECTOR CURRENT

Figure 9. Resistive Switching Time, t

9 8

7

6

5

(us),TIM E

4

OFF

t

3

2

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1123

TJ=25oC

TJ=125oC

IC=5IB1=5I VCC=300V PW=20us

off

B2

IC[A], COLLE CTOR CURRENT

Figure 11. Resistive Switching Time, t

off

100100

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1123

IC[A], COLLECTOR CURRENT

Figure 10. Resistive Switching Time, t

6

IC=5IB1=2I

5

4

3

(us),TIM E

2

STG

t

11

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1123

VCC=15V VZ=300V LC=200uH

B2

TJ=125oC

TJ=25oC

on

IC[A], COLLECTOR CURRENT

Figure 12. Inductive Switching Time, t

STG

Typical Characteristics (Continued)

KSC5502 — High Voltage Power Switch Mode Application

400

IC=5IB1=2I VCC=15V VZ=300V LC=200uH

B2

300

200

100100

90 80 70

(ns),TIME

F

t

60 50

40

30

20

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1123

TJ=25oC

TJ=125oC

IC[A], COLLECTOR CURRENT

Figure 13. Inductive Switching Time, t

1010

9

IC=5IB1=5I

8 7

6

5

4

3

(us),TIME

STG

t

2

11

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1123

VCC=15V VZ=300V LC=200uH

B2

TJ=125oC

TJ=25oC

F

IC[A], COLLECTOR CURRENT

Figure 15. Inductive Switching Time, t

4000

3000

IC=5IB1=5I

B2

VCC=15V

2000

VZ=300V LC=200uH

10001000

900 800 700

600 500

[ns],TIM E

C

t

400

300

200

TJ=125oC

TJ=25oC

STG

600

500

IC=5IB1=2I

B2

VCC=15V VZ=300V

400

LC=200uH

300

[ns],TIM E

C

200

t

100100

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1123

TJ=25oC

TJ=125oC

IC[A], COLLECTOR CURRENT

Figure 14. Inductive Switching Time, t

2000

IC=5IB1=5I

B2

VCC=15V VZ=300V

1000

900

LC=200uH

800 700 600

500 400

300

(ns),TIME

F

t

200

100

90 80 70

60 50

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1123

TJ=125oC

TJ=25oC

c

IC[A], COLLECTOR CURRENT

Figure 16. Inductive Switching Time, t

5

IC=5IB1=2I

B2

VCC=15V VZ=300V

4

LC=200uH

3

2

, TIME[us]

STG

t

1

IC=0.4A

TJ=25oC

TJ=125oC

IC=0.8A

F

100100

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1123

IC[A], COLLECTOR CURRENT

Figure 17. Inductive Switching Time, t

c

0

10 11 12

hFE, FORCED GAIN @ VCE=1V & IC=0.8A

Figure 18. Inductive Switching Time, t

STG

Typical Characteristics (Continued)

KSC5502 — High Voltage Power Switch Mode Application

300

IC=5IB1=2I

B2

VCC=15V

250

VZ=300V LC=200uH

200

150

, TIME[n s ]

F

t

100

50

0

10 11 12

TJ=25oC

TJ=125oC

IC=0.8A

IC=0.4A

hFE, FORCED GAIN @ VCE=1V & IC=0.8A

Figure 19. Inductive Switching Time, t

1000

C

ib

100

F=1MHz

500

IC=5IB1=2I

B2

VCC=15V VZ=300V

400

LC=200uH

300

200

, TIME[ns]

C

t

100

0

10 11 12

TJ=25oC

TJ=125oC

IC=0.8A

IC=0.4A

hFE, FORCED GAIN @ VCE=1V & IC=0.8A

F

Figure 20. Inductive Switching Time, t

60

50

40

30

c

10

CAPACI TANCE [pF]

1

1 10 100

C

ob

REVERSE VOLTA GE[V]

Figure 21. Capacitance Figure 22. Power Derating

20

[W], POWER DISS IPATION

C

10

P

0

0 50 100 150 200

TC(oC), CASE TEMPERATURE

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KSC5502 High Voltage Power Switch Mode ApplicationKSC5502

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

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2. A critical component is any component of a life support device or system whose failure to per form can be re asonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

provided in the labeling, can be reas onably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data; supplementary data will be pub-

Preliminary First Production

lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production

This datasheet contains f inal specifications. Fairchild Semiconducto r reserves the right to make changes at any time without notice to improve design.

This datasheet contains specifications on a product that has been discontin-

Obsolete Not In Production

ued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I31