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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor KSC5337
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR) CEO
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(T
= 400V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
I
P
CBO
CEO
EBO
I
C
CM
I
B
BM
C
T
J
Collector-Base Voltage 700 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 9 V
Collector Current-Continuous 8 A
Collector Current-Peak 15 A
B Base Current-Continuous 2 A
Base Current-Peak 4 A
Collector Power Dissipation
@ TC=25℃
Junction Temperature 150 ℃
100 W
T
stg
Storage Temperature Range -65~150 ℃
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor KSC5337
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
CE
(sat)-1
V
CE
V
BE
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
C
(sat)-2
(sat)-1
(sat)-2
OB
Collector-Base Breakdown Voltage IC= 1mA; IE= 0 7000 V
Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 B 400 V
Collector-Emitter Saturation Voltage IC= 1.3A; IB= 0.13A 0.5 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 0.7 V
Base-Emitter Saturation Voltage IC= 1.3A; IB= 0.13A 1.1 V
Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.25 V
Collector Cutoff Current VCB= 700V; RBE= 0; IB= 0 100
Emitter Cutoff Current VEB= 9V; IC=0 10
μA
μA
DC Current Gain IC= 0.5A; VCE= 5V 15 40
DC Current Gain IC= 3A; VCE= 1V 6
Output Capacitance
= 0; VCB= 10V; f
I
E
= 0.1MHz
test
70 pF
f
T
Current-Gain—Bandwidth Product IC= 0.1A ;VCE= 6V 14 MHz
Switching Times
t
on
t
s
t
f
Turn-On Time 0.2
Storage Time 2.0
Fall Time
= 1A; IB1= -IB2=0.2A;
I
C
= 125V
V
CC
μs
μs
0.5
μs
isc Website：www.iscsemi.cn
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